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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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A Thin Film Approach to Engineering Functionality into Oxides

Journal of the American Ceramic Society, 2008-08, Vol.91 (8), p.2429-2454

2008

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From epitaxial growth of ferrite thin films to spin-polarized tunnelling

Journal of physics. D, Applied physics, 2013-04, Vol.46 (14), p.143001-1-27

Moussy, Jean-Baptiste

2013

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Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Thin solid films, 2014-04, Vol.557, p.169-172

2014

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Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Thin solid films, 2011-10, Vol.520 (1), p.224-229

2011

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Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

Journal of crystal growth, 2014-02, Vol.387, p.96-100

2014

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Ferroelectric Oxide Made Directly on Silicon

Science (American Association for the Advancement of Science), 2009-04, Vol.324 (5925), p.367-370

2009

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Advances in the theory of III-V nanowire growth dynamics

Journal of physics. D, Applied physics, 2013-08, Vol.46 (31), p.313001-1-29

2013

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Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

Journal of crystal growth, 2014-04, Vol.392, p.30-33

2014

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CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

IEEE electron device letters, 2012-01, Vol.33 (1), p.41-43

2012

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Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Journal of crystal growth, 2009-03, Vol.311 (7), p.2063-2068

2009

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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω · mm

IEEE electron device letters, 2012-04, Vol.33 (4), p.525-527

2012

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Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Journal of crystal growth, 2012-06, Vol.348 (1), p.75-79

2012

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Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Journal of crystal growth, 2012, Vol.338 (1), p.107-110

2012

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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Journal of crystal growth, 2011-11, Vol.334 (1), p.103-107

2011

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Graphene growth on h-BN by molecular beam epitaxy

Solid state communications, 2012-06, Vol.152 (12), p.975-978

2012

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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

Journal of crystal growth, 2012-08, Vol.353 (1), p.39-46

2012

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“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?

Journal of electronic materials, 2010-07, Vol.39 (7), p.1030-1035

Tennant, W. E.

2010

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MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic

Journal of electronic materials, 2008-09, Vol.37 (9), p.1406-1410

2008

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Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Journal of crystal growth, 2013-12, Vol.384, p.71-76

2013

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Solar-blind wurtzite MgZnO alloy films stabilized by Be doping

Journal of physics. D, Applied physics, 2013-06, Vol.46 (24), p.245103-1-4

2013

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Room-temperature ferromagnetism in un-doped ZrO2 thin films

Journal of physics. D, Applied physics, 2013-11, Vol.46 (44)

2013

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Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Journal of crystal growth, 2008-06, Vol.310 (13), p.3154-3158

2008

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Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Crystal growth & design, 2013-08, Vol.13 (8), p.3365-3373

2013

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On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2008-08, Vol.310 (18), p.4035-4045

2008

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MBE grown Ga2O3 and its power device applications

A Thin Film Approach to Engineering Functionality into Oxides

From epitaxial growth of ferrite thin films to spin-polarized tunnelling

Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

Ferroelectric Oxide Made Directly on Silicon

Advances in the theory of III-V nanowire growth dynamics

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω · mm

Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Graphene growth on h-BN by molecular beam epitaxy

Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?

MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Solar-blind wurtzite MgZnO alloy films stabilized by Be doping

Room-temperature ferromagnetism in un-doped ZrO2 thin films

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

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