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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

IEEE electron device letters, 2019-07, Vol.40 (7), p.1052-1055

2019

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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

IEEE electron device letters, 2018-04, Vol.39 (4), p.568-571

2018

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Development of gallium oxide power devices

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.21-26

2014

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Advanced functional materials, 2021-05, Vol.31 (21), p.n/a

2021

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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4433-4436

2024

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

IEEE electron device letters, 2022-08, Vol.43 (8), p.1307-1310

2022

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10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

IEEE electron device letters, 2023-07, Vol.44 (7), p.1048-1051

2023

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Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

IEEE electron device letters, 2018-09, Vol.39 (9), p.1381-1384

2018

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n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

IEEE electron device letters, 2022-04, Vol.43 (4), p.588-591

2022

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SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

IEEE electron device letters, 2021-01, Vol.42 (1), p.74-77

2021

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High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE electron device letters, 2019-11, Vol.40 (11), p.1748-1751

2019

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Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2557-2564

2024

Volltextzugriff (PDF)

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Materials & design, 2023-07, Vol.231, p.112035, Article 112035

2023

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Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1361-1366

2022

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Design of high gain MMIC amplifier for LEO satellite communication systems

Maǧallaẗ al-abḥath al-handasiyyaẗ, 2024-06

Bacha, Mansour

2024

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Normally-OFF Diamond Reverse Blocking MESFET

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6279-6285

2021

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Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Nano letters, 2018-03, Vol.18 (3), p.1937-1945

2018

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Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4021-4026

2020

Volltextzugriff (PDF)

Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

1st edition., 2019

Volltextzugriff (PDF)

An improved model for current voltage characteristics of submicron SiC MESFETs

Solid-state electronics, 2016-07, Vol.121, p.54-61

2016

Volltextzugriff (PDF)

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE transactions on industrial electronics (1982), 2015-05, Vol.62 (5), p.3182-3191

2015

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Simulation and comparison of current-voltage characteristics of advanced MESFET by varying channel materials (Si, Ge, GaAs) and comparing it with single gate MOSFET to optimize conductivity

AIP Conference Proceedings, 2023, Vol.2655 (1)

2023

Volltextzugriff (PDF)

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1

2020

Volltextzugriff (PDF)

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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

MBE grown Ga2O3 and its power device applications

Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Development of gallium oxide power devices

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs

2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

Design of high gain MMIC amplifier for LEO satellite communication systems

Normally-OFF Diamond Reverse Blocking MESFET

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

An improved model for current voltage characteristics of submicron SiC MESFETs

SiC Integrated Circuit Control Electronics for High-Temperature Operation

Simulation and comparison of current-voltage characteristics of advanced MESFET by varying channel materials (Si, Ge, GaAs) and comparing it with single gate MOSFET to optimize conductivity

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

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