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Schottky barrier height of Ni to β-(AlxGa1−x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

Semiconductor science and technology, 2017-01, Vol.32 (3)

2017

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Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3

Materials science in semiconductor processing, 2022-05, Vol.142, p.106493, Article 106493

2022

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Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy spectroscopy study and deduction of exciton binding energy

2d materials, 2015-06, Vol.2 (3)

2015

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Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Journal of physics. D, Applied physics, 2021-11, Vol.54 (45), p.453002

2021

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Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 − xSn x Ge semiconductor probed by x-ray absorption and diffraction methods

Semiconductor science and technology, 2014-09, Vol.29 (11)

2014

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Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus

Nano letters, 2016-08, Vol.16 (8), p.4903-4908

2016

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Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy

Japanese Journal of Applied Physics, 2023-04, Vol.62 (4)

2023

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Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Nano letters, 2015-02, Vol.15 (2), p.876-882

2015

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Triaxially uniform high-quality Al x Ga (1-x) N (x ∼ 50%) nanowires on template free sapphire substrate

Nanotechnology, 2019-02, Vol.30 (6), p.065603-065603

2019

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Characterization of composition dependence of properties of a MgNiO-based MSM structure

Physica scripta, 2024-09, Vol.99 (9), p.95974

2024

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Microstructural Characterization of InN Growth Process by RF-MBE

Journal of the Society of Materials Science, Japan, 2024/04/15, Vol.73(4), pp.351-355

2024

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On Energy Dissipation Theory and Numerical Stability for Time-Fractional Phase-Field Equations

SIAM journal on scientific computing, 2019-01, Vol.41 (6), p.A3757-A3778

2019

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Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Journal of physics. D, Applied physics, 2021-05, Vol.54 (18), p.185105

2021

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The Current State of Model Based Definition

Computer-aided design and applications, 2019, Vol.16 (2), p.308-317

2019

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Growth of ferromagnetic Co2FeSi films on flexible Ge(111)

Materials science in semiconductor processing, 2020-06, Vol.112, Article 104997

2020

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Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

ACS applied materials & interfaces, 2022-04, Vol.14 (13), p.15747-15755

2022

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Electronic Materials Accelerating the Development of Ubiquitous Devices: II: Crystal Growth and Characterization of Nitride Semiconductors on ScAlMgO4 Substrates using RF-MBE

Journal of the Society of Materials Science, Japan, 2023/09/15, Vol.72(9), pp.689-694

2023

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ユビキタスデバイス開発を加速する新しいエレクトロニクス材料: 2．RF-MBE法によるScAlMgO4基板上窒化物半導体の結晶成長と評価

材料, 2023/09/15, Vol.72(9), pp.689-694

2023

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Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Journal of physics. D, Applied physics, 2024-09, Vol.57 (37)

2024

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Growth of single crystal non-polar (112¯0) ZnSnN2 films on sapphire substrate

Applied surface science, 2019-07, Vol.481, p.819-824

2019

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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

IEEE electron device letters, 2019-07, Vol.40 (7), p.1052-1055

2019

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Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Journal of physics. D, Applied physics, 2024-06, Vol.57 (37)

2024

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Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy

Applied surface science, 2023-11, Vol.638, p.158008, Article 158008

2023

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Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

IEEE electron device letters, 2018-04, Vol.39 (4), p.568-571

2018

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Well-posedness for a molecular beam epitaxy model

Journal of mathematical analysis and applications, 2024-12, Vol.540 (2), p.128617, Article 128617

2024

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Schottky barrier height of Ni to β-(AlxGa1−x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3

Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy spectroscopy study and deduction of exciton binding energy

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 − xSn x Ge semiconductor probed by x-ray absorption and diffraction methods

Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus

Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Triaxially uniform high-quality Al x Ga (1-x) N (x ∼ 50%) nanowires on template free sapphire substrate

Characterization of composition dependence of properties of a MgNiO-based MSM structure

Microstructural Characterization of InN Growth Process by RF-MBE

On Energy Dissipation Theory and Numerical Stability for Time-Fractional Phase-Field Equations

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

The Current State of Model Based Definition

Growth of ferromagnetic Co2FeSi films on flexible Ge(111)

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Electronic Materials Accelerating the Development of Ubiquitous Devices: II: Crystal Growth and Characterization of Nitride Semiconductors on ScAlMgO4 Substrates using RF-MBE

ユビキタスデバイス開発を加速する新しいエレクトロニクス材料: 2．RF-MBE法によるScAlMgO4基板上窒化物半導体の結晶成長と評価

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Growth of single crystal non-polar (112¯0) ZnSnN2 films on sapphire substrate

beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy

Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Well-posedness for a molecular beam epitaxy model

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