UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.999-1005

2022

Volltextzugriff (PDF)

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

IEEE transactions on industrial electronics (1982), 2017-11, Vol.64 (11), p.9012-9022

2017

Volltextzugriff (PDF)

An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

Volltextzugriff (PDF)

High-Temperature HEMT Model

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4821-4827

2022

Volltextzugriff (PDF)

A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4058-4065

2024

Volltextzugriff (PDF)

Modeling of Short-Channel Effects in GaN HEMTs

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3088-3094

2020

Volltextzugriff (PDF)

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1608-1611

2022

Volltextzugriff (PDF)

Stability, Reliability, and Robustness of GaN Power Devices: A Review

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8442-8471

2023

Volltextzugriff (PDF)

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1563-1569

2021

Volltextzugriff (PDF)

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1393-1401

2012

Volltextzugriff (PDF)

Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Journal of physics. D, Applied physics, 2022-09, Vol.55 (35), p.355103

2022

Volltextzugriff (PDF)

Deep Learning-Based ASM-HEMT I-V Parameter Extraction

IEEE electron device letters, 2022-10, Vol.43 (10), p.1633-1636

2022

Volltextzugriff (PDF)

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f/f} of 454/444 GHz

IEEE electron device letters, 2015-06, Vol.36 (6), p.549-551

2015

Volltextzugriff (PDF)

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6292-6300

2020

Volltextzugriff (PDF)

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

Volltextzugriff (PDF)

InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates

IEEE microwave and wireless components letters, 2020-11, Vol.30 (11), p.1089-1092

2020

Volltextzugriff (PDF)

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3157-3165

2013

Volltextzugriff (PDF)

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

IEEE electron device letters, 2017-07, Vol.38 (7), p.918-921

2017

Volltextzugriff (PDF)

Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4543-4549

2021

Volltextzugriff (PDF)

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

IEEE electron device letters, 2015-04, Vol.36 (4), p.327-329

2015

Volltextzugriff (PDF)

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2453-2461

2014

Volltextzugriff (PDF)

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

Volltextzugriff (PDF)

An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)

IEEE transactions on power electronics, 2024-09, p.1-10

2024

Volltextzugriff (PDF)

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

IEEE electron device letters, 2021-01, Vol.42 (1), p.22-25

2021

Volltextzugriff (PDF)

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7412-7416

2021

Volltextzugriff (PDF)

1 – 25 von 20.931

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(8.232)
Mit Volltextzugriff
(16.863)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

7 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Hemts
(12.726)
Science & Technology
(12.108)
Technology
(11.382)
Engineering
(10.247)
Engineering, Electrical & Electronic
(10.101)
Modfets
(6.814)
Gallium Nitride
(5.497)
Physical Sciences
(5.197)
Physics
(4.666)
High Electron Mobility Transistors
(3.991)
Logic Gates
(3.941)
Gallium Nitrides
(3.726)
Physics, Applied
(3.680)
Semiconductor Devices
(3.323)
Dh-Hemts
(3.100)
Aluminum Gallium Nitride
(2.779)
Transistors
(2.648)
Hemt
(2.623)
Gallium Arsenide
(2.074)
Electronics
(2.049)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps

High-Temperature HEMT Model

A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs

Modeling of Short-Channel Effects in GaN HEMTs

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Deep Learning-Based ASM-HEMT I-V Parameter Extraction

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f/f} of 454/444 GHz

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Suchergebnisse filtern