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TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4119-4124

2024

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Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Physica status solidi. PSS-RRL. Rapid research letters, 2024-09, Vol.18 (9), p.n/a

2024

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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3734-3739

2017

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Regioregular Narrow‐Bandgap n‐Type Polymers with High Electron Mobility Enabling Highly Efficient All‐Polymer Solar Cells

Advanced materials (Weinheim), 2021-09, Vol.33 (37), p.e2102635-n/a

2021

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On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Applied physics letters, 2017-03, Vol.110 (12)

2017

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Bis‐Diketopyrrolopyrrole Moiety as a Promising Building Block to Enable Balanced Ambipolar Polymers for Flexible Transistors

Advanced materials (Weinheim), 2017-06, Vol.29 (22), p.n/a

2017

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Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3748-3755

2019

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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5337-5342

2018

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Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

IEEE transactions on industry applications, 2019-03, Vol.55 (2), p.1807-1816

2019

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Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.566-570

2020

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Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Applied physics letters, 2017-07, Vol.111 (4)

2017

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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs

IEEE transactions on power electronics, 2019-10, Vol.34 (10), p.10121-10135

2019

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High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.289-295

2020

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Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2673-2679

2021

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AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3296-3301

2021

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A Complete Switching Analytical Model of Low-Voltage eGaN HEMTs and Its Application in Loss Analysis

IEEE transactions on industrial electronics (1982), 2020-02, Vol.67 (2), p.1615-1625

2020

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A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2017-12, Vol.65 (12), p.5113-5122

2017

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Integration of polycrystalline Ga2O3 on diamond for thermal management

Applied physics letters, 2020-02, Vol.116 (6)

2020

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Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.4148-4160

2022

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6292-6300

2020

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High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1293-1296

2019

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E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

IEEE electron device letters, 2020-04, Vol.41 (4), p.1-1

2020

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Reliable Hybrid Small-Signal Modeling of GaN HEMTs Based on Particle-Swarm-Optimization

IEEE transactions on computer-aided design of integrated circuits and systems, 2018-09, Vol.37 (9), p.1816-1824

2018

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Extreme Temperature Modeling of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.430-437

2020

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TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Regioregular Narrow‐Bandgap n‐Type Polymers with High Electron Mobility Enabling Highly Efficient All‐Polymer Solar Cells

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Bis‐Diketopyrrolopyrrole Moiety as a Promising Building Block to Enable Balanced Ambipolar Polymers for Flexible Transistors

Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs

High-Resolution AlGaN/GaN HEMT-Based Electrochemical Sensor for Biomedical Applications

Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

A Complete Switching Analytical Model of Low-Voltage eGaN HEMTs and Its Application in Loss Analysis

A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

Integration of polycrystalline Ga2O3 on diamond for thermal management

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

A GaN–SiC hybrid material for high-frequency and power electronics

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

Reliable Hybrid Small-Signal Modeling of GaN HEMTs Based on Particle-Swarm-Optimization

Extreme Temperature Modeling of AlGaN/GaN HEMTs

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