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IGBT Junction Temperature Measurement via Peak Gate Current
IEEE transactions on power electronics, 2016-05, Vol.31 (5), p.3784-3793
2016
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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
IEEE transactions on power electronics, 2019-02, Vol.34 (2), p.1181-1196
2019
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Real-Time Device-Level Transient Electrothermal Model for Modular Multilevel Converter on FPGA
IEEE transactions on power electronics, 2016-09, Vol.31 (9), p.6155-6168
2016
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Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
IEEE transactions on microwave theory and techniques, 2021-10, Vol.69 (10), p.4541-4560
2021
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SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1068-1086
2017
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An Analytical Carrier Recombination Turn-off Transient Model for High-Voltage IGBTs
IEEE transactions on power electronics, 2024-06, Vol.39 (6), p.1-13
2024
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Broadband Modeling, Analysis, and Characterization of SiGe HBT Terahertz Direct Detectors
IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1314-1333
2022
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A Hybrid Active Gate Drive for Switching Loss Reduction and Voltage Balancing of Series-Connected IGBTs
IEEE transactions on power electronics, 2017-10, Vol.32 (10), p.7469-7481
2017
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Real-Time Aging Monitoring for IGBT Modules Using Case Temperature
IEEE transactions on industrial electronics (1982), 2016-02, Vol.63 (2), p.1168-1178
2016
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Analysis of Blocking Capability Failure Mechanism in IGBT Module under High Salt Spray Environment
IEEE transactions on dielectrics and electrical insulation, 2023-12, Vol.30 (6), p.1-1
2023
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Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs
IEEE transactions on power electronics, 2018-05, Vol.33 (5), p.3802-3815
2018
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The Trench Power MOSFET: Part I-History, Technology, and Prospects
IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691
2017
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Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs
IEEE transactions on power electronics, 2018-07, Vol.33 (7), p.6048-6059
2018
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Monitoring Bond Wires Fatigue of Multichip IGBT module Using Time Duration of The Gate Charge
IEEE transactions on power electronics, 2021-01, Vol.36 (1), p.1-1
2021
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Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT
IEEE transactions on power electronics, 2017-04, Vol.32 (4), p.3075-3087
2017
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Electric-Field-Dependence Mechanism for Cosmic Ray Failure in Power Semiconductor Devices
IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3505-3512
2021
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Open-Circuit Fault Diagnosis in Power Inverters Through Currents Analysis in Time Domain
IEEE transactions on instrumentation and measurement, 2021, Vol.70, p.1-12
2021
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3-D Scaling Rules for High-Voltage Planar Clustered IGBTs
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5613-5620
2020
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LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption
IEEE transactions on microwave theory and techniques, 2021-03, Vol.69 (3), p.1943-1954
2021
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A Physics-Based Analytical Formulation for the Tunneling Current Through the Base of Bipolar Transistors Operating at Cryogenic Temperatures
IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-7
2023
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Device Design Direction of CSTBT for Low Loss and EMI Noise
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6144-6150
2023
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A Series Stacked IGBT Switch With Robustness Against Short-Circuit Fault for Pulsed Power Applications
IEEE transactions on power electronics, 2018-05, Vol.33 (5), p.3779-3790
2018
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A Novel Lumped-Charge Model for Insulated Gate Bipolar Transistor Based on Dynamic Charge Control
IEEE transactions on power electronics, 2023-08, Vol.38 (8), p.1-13
2023
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Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers-Part II: Application and Results
IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8
2023
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Study on the Method to Measure Thermal Contact Resistance Within Press Pack IGBTs
IEEE transactions on power electronics, 2019-02, Vol.34 (2), p.1509-1517
2019
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