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Immunizing Aqueous Zn Batteries against Dendrite Formation and Side Reactions at Various Temperatures via Electrolyte Additives

Small (Weinheim an der Bergstrasse, Germany), 2021-10, Vol.17 (42), p.e2103195-n/a

2021

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Computational screening of nonmetal dopants to active MoS2 basal-plane for hydrogen evolution reaction via structural descriptor

Journal of catalysis, 2022-12, Vol.416, p.47-57

2022

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Unveiling Active Sites for the Hydrogen Evolution Reaction on Monolayer MoS2

Advanced materials (Weinheim), 2017-11, Vol.29 (42), p.n/a

2017

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Dual‐Functional N Dopants in Edges and Basal Plane of MoS2 Nanosheets Toward Efficient and Durable Hydrogen Evolution

Advanced energy materials, 2017-04, Vol.7 (7), p.n/a

2017

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Enhanced Activities in Alkaline Hydrogen and Oxygen Evolution Reactions on MoS2 Electrocatalysts by In‐Plane Sulfur Defects Coupled with Transition Metal Doping

Small (Weinheim an der Bergstrasse, Germany), 2022-09, Vol.18 (39), p.e2203173-n/a

2022

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Potential and support-dependent hydrogen evolution reaction activation energies on sulfur vacancies of MoS2 from GC-DFT

International journal of hydrogen energy, 2023-03, Vol.48 (23), p.8478-8488

2023

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Degradation Mechanism and Enhancing Strategies of Oxygen Reduction Reaction Catalyzed by Carbon‐Based Metal Free Catalysts in Acidic Solution

Advanced energy materials, 2023-01, Vol.13 (1), p.n/a

2023

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Ion Irradiation Activated Catalytic Activity of MoSe2 Nanosheet for High‐Efficiency Hydrogen Evolution Reaction

Advanced energy materials, 2023-07, Vol.13 (28), p.n/a

2023

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2D gallium molybdenum selenide grown on a hollow carbon nanofibrous aerogel for high-efficiency electroreduction of nitrogen: Optimized basal plane activity via selenium vacancy modulation

Applied catalysis. B, Environmental, 2021-09, Vol.292, p.120175, Article 120175

2021

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SnS2 quantum dots growth on MoS2: Atomic-level heterostructure for electrocatalytic hydrogen evolution

Electrochimica acta, 2019-03, Vol.300, p.45-52

2019

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Interlayer Biatomic Pair Bridging the van der Waals Gap for 100% Activation of 2D Layered Material

Advanced materials (Weinheim), 2024-05, Vol.36 (18), p.e2308984-n/a

2024

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Phosphorous-doped molybdenum disulfide anchored on silicon as an efficient catalyst for photoelectrochemical hydrogen generation

Applied catalysis. B, Environmental, 2020-04, Vol.263, p.118259, Article 118259

2020

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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Materials science forum, 2020-07, Vol.1004, p.393-400

2020

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Surface force measurements at the basal planes of ordered kaolinite particles

Journal of colloid and interface science, 2010-04, Vol.344 (2), p.362-371

2010

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Sheet‐Isolated MoS2 Used for Dispersing Pt Nanoparticles and its Application in Methanol Fuel Cells

Chemistry : a European journal, 2024-01, Vol.30 (2), p.e202302934-n/a

2024

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Effects of thin-layer diffusion in the electrochemical detection of nicotine on basal plane pyrolytic graphite (BPPG) electrodes modified with layers of multi-walled carbon nanotubes (MWCNT-BPPG)

Sensors and actuators. B, Chemical, 2010-01, Vol.144 (1), p.153-158

2010

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2020-06, Vol.49 (6), p.3455-3464

2020

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Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1005

2022

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Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations

Materials science forum, 2018-06, Vol.924, p.143-146

2018

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Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD01

2021

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Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

Solid state phenomena, 2023-05, Vol.343, p.9-14

2023

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High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio

Journal of crystal growth, 2020-01, Vol.530, p.125302, Article 125302

2020

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Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Materials science forum, 2018-06, Vol.924, p.293-296

2018

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Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Materials science forum, 2020-07, Vol.1004, p.71-77

2020

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New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

Materials science forum, 2019-07, Vol.963, p.123-126

2019

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Immunizing Aqueous Zn Batteries against Dendrite Formation and Side Reactions at Various Temperatures via Electrolyte Additives

Computational screening of nonmetal dopants to active MoS2 basal-plane for hydrogen evolution reaction via structural descriptor

Unveiling Active Sites for the Hydrogen Evolution Reaction on Monolayer MoS2

Dual‐Functional N Dopants in Edges and Basal Plane of MoS2 Nanosheets Toward Efficient and Durable Hydrogen Evolution

Enhanced Activities in Alkaline Hydrogen and Oxygen Evolution Reactions on MoS2 Electrocatalysts by In‐Plane Sulfur Defects Coupled with Transition Metal Doping

Potential and support-dependent hydrogen evolution reaction activation energies on sulfur vacancies of MoS2 from GC-DFT

Degradation Mechanism and Enhancing Strategies of Oxygen Reduction Reaction Catalyzed by Carbon‐Based Metal Free Catalysts in Acidic Solution

Ion Irradiation Activated Catalytic Activity of MoSe2 Nanosheet for High‐Efficiency Hydrogen Evolution Reaction

2D gallium molybdenum selenide grown on a hollow carbon nanofibrous aerogel for high-efficiency electroreduction of nitrogen: Optimized basal plane activity via selenium vacancy modulation

SnS2 quantum dots growth on MoS2: Atomic-level heterostructure for electrocatalytic hydrogen evolution

Interlayer Biatomic Pair Bridging the van der Waals Gap for 100% Activation of 2D Layered Material

Phosphorous-doped molybdenum disulfide anchored on silicon as an efficient catalyst for photoelectrochemical hydrogen generation

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Surface force measurements at the basal planes of ordered kaolinite particles

Sheet‐Isolated MoS2 Used for Dispersing Pt Nanoparticles and its Application in Methanol Fuel Cells

Effects of thin-layer diffusion in the electrochemical detection of nicotine on basal plane pyrolytic graphite (BPPG) electrodes modified with layers of multi-walled carbon nanotubes (MWCNT-BPPG)

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

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