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Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films

Journal of crystal growth, 2014-03, Vol.390, p.5-11

2014

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Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire

Journal of crystal growth, 2006-04, Vol.290 (1), p.166-170

2006

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Strain-driven synthesis of 〈112〉 direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

Journal of crystal growth, 2016-09, Vol.449, p.5-9

2016

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Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer

Journal of crystal growth, 2016-04, Vol.440, p.81-85

2016

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Properties of GaN layers grown on N-face free-standing GaN substrates

Journal of crystal growth, 2015-03, Vol.413, p.81-85

2015

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Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

Journal of crystal growth, 2009-05, Vol.311 (10), p.2834-2836

2009

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Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

Journal of crystal growth, 2009-07, Vol.311 (14), p.3622-3625

2009

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MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

Journal of crystal growth, 2013-06, Vol.372, p.105-108

2013

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Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

Journal of crystal growth, 2013-05, Vol.370, p.197-199

2013

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Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Journal of crystal growth, 2009-05, Vol.311 (10), p.2937-2941

2009

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Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

Journal of crystal growth, 2009-01, Vol.311 (3), p.698-701

2009

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Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

Journal of crystal growth, 2009-05, Vol.311 (10), p.2879-2882

2009

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Density of liquid GaSb measured by an improved Archimedean method

Journal of crystal growth, 2006-07, Vol.293 (1), p.14-17

2006

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Journal of crystal growth, 2017-10, Vol.475, p.121-126

2017

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Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots

Journal of crystal growth, 2007, Vol.298, p.586-590

2007

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The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Journal of crystal growth, 2004-10, Vol.270 (3-4), p.359-363

2004

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Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si

Journal of crystal growth, 2011-03, Vol.318 (1), p.460-463

2011

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Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect

Journal of crystal growth, 2013-05, Vol.370, p.136-140

2013

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Fabrication of In 0.15Ga 0.85As nanohloes on GaAs by droplet molecular beam epitaxy

Journal of crystal growth, 2009, Vol.311 (7), p.1843-1846

2009

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Aluminum incorporation in Al x Ga 1 - x N -layers and implications for growth optimization

Journal of crystal growth, 2007, Vol.298, p.361-366

2007

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Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1843-1846

2009

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Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption

Journal of crystal growth, 2003-04, Vol.251 (1), p.192-195

2003

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III-V material growth on electrochemically porosified Ge substrates

Journal of crystal growth, 2023-01, Vol.602, p.126980, Article 126980

2023

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Bi flux-dependent MBE growth of GaSbBi alloys

Journal of crystal growth, 2015-09, Vol.425 (C), p.241-244

2015

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Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate

Journal of crystal growth, 2023-12, Vol.624, p.127433, Article 127433

2023

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Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films

Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire

Strain-driven synthesis of 〈112〉 direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer

Properties of GaN layers grown on N-face free-standing GaN substrates

Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

Density of liquid GaSb measured by an improved Archimedean method

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si

Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect

Fabrication of In 0.15Ga 0.85As nanohloes on GaAs by droplet molecular beam epitaxy

Aluminum incorporation in Al x Ga 1 - x N -layers and implications for growth optimization

Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy

Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption

III-V material growth on electrochemically porosified Ge substrates

Bi flux-dependent MBE growth of GaSbBi alloys

Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate

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