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Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

Applied physics letters, 2022-11, Vol.121 (22)

2022

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Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

Journal of applied physics, 2024-03, Vol.135 (11)

2024

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A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

AIP advances, 2023-01, Vol.13 (1), p.015202-015202-8

2023

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Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode

Applied physics letters, 2024-08, Vol.125 (6)

2024

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A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect

Journal of semiconductors, 2023-07, Vol.44 (7), p.37-40

2023

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High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

Applied physics express, 2024-06, Vol.17 (6), p.066501

2024

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8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Applied physics express, 2024-03, Vol.17 (3), p.036504

2024

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Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination

IEEE electron device letters, 2022-02, Vol.43 (2), p.264-267

2022

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Vertical β-Ga2O3 power electronics

Journal of semiconductors, 2023-07, Vol.44 (7), p.4-7

2023

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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Science China materials, 2022-06, Vol.65 (6), p.1623-1630

2022

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Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Journal of semiconductors, 2023-07, Vol.44 (7), p.32-36

2023

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Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

Science China materials, 2023-02, Vol.66 (2), p.748-755

2023

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GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC-DC Converter

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.933-941

2022

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Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2129

2023

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Vertical β-Ga 2 O 3 Power Transistors: Fundamentals, Designs, and Opportunities

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1513-1522

2024

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Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and Opportunities

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1513-1522

2024

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Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

IEEE electron device letters, 2022-02, Vol.43 (2), p.264-267

2022

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Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1501-1506

2021

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Selective High-resistance Zones Formed by Oxygen Annealing for β-Ga2O3 Schottky Diode Applications

IEEE electron device letters, 2022-11, p.1-1

2022

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A large-area multi-finger β-Ga 2 O 3 MOSFET and its self-heating effect

Journal of semiconductors, 2023-07, Vol.44 (7), p.72804

2023

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Demonstration of β-Ga 2 O 3 Heterojunction Gate Field-Effect Rectifier

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3762-3767

2023

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2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1

2023

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Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes

Journal of physics. D, Applied physics, 2022-07, Vol.55 (30)

2022

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Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3762-3767

2023

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Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode

A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect

High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact

8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination

Vertical β-Ga2O3 power electronics

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Unintentional doping effect in Si-doped MOCVD β-Ga2O3 films: Shallow donor states

GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC-DC Converter

Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

Vertical β-Ga 2 O 3 Power Transistors: Fundamentals, Designs, and Opportunities

Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and Opportunities

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study

Selective High-resistance Zones Formed by Oxygen Annealing for β-Ga2O3 Schottky Diode Applications

A large-area multi-finger β-Ga 2 O 3 MOSFET and its self-heating effect

Demonstration of β-Ga 2 O 3 Heterojunction Gate Field-Effect Rectifier

2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes

Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier

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