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On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures

Applied physics letters, 2017-01, Vol.110 (3)

2017

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Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires

Scientific reports, 2023-04, Vol.13 (1), p.6633-6633, Article 6633

2023

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Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Scientific reports, 2022-05, Vol.12 (1), p.7230-7230, Article 7230

2022

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AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers

IEEE journal of quantum electronics, 2018-12, Vol.54 (6), p.1-9

2018

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AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode

Applied physics letters, 2022-04, Vol.120 (17)

2022

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Abnormal Photocurrent in Semiconductor p‐n Heterojunctions: Toward Multifunctional Photoelectrochemical‐Type Photonic Devices and Beyond

Advanced electronic materials, 2023-12, Vol.9 (12), p.n/a

2023

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Extending group-III nitrides to the infrared: Recent advances in InN

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1050-1062

2015

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Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Advanced materials (Weinheim), 2016-10, Vol.28 (38), p.8446-8454

2016

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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Micromachines (Basel), 2020-01, Vol.11 (2), p.125

2020

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Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

Applied physics letters, 2014-12, Vol.105 (23)

2014

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Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

Applied physics letters, 2015-05, Vol.106 (21)

2015

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AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

Nano letters, 2017-06, Vol.17 (6), p.3738-3743

2017

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Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Crystals (Basel), 2017-09, Vol.7 (9), p.268

2017

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Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes

Applied physics letters, 2017-09, Vol.111 (10)

2017

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Photoluminescence properties of Mg-doped InN nanowires

Applied physics letters, 2013-11, Vol.103 (20), p.203113

2013

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Wafer-scale synthesis of monolayer WSe2: A multi-functional photocatalyst for efficient overall pure water splitting

Nano energy, 2018-09, Vol.51, p.54-60

2018

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Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2

Scientific reports, 2018-04, Vol.8 (1), p.1-7, Article 6520

2018

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Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters using Al-Content Engineered Superlattice Electron Blocking Layer

IEEE journal of quantum electronics, 2023-02, Vol.59 (1), p.1-1

2023

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Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities

ACS nano, 2024-05, Vol.18 (22), p.14290-14297

2024

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Facile Semiconductor p–n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

Nano-micro letters, 2024-12, Vol.16 (1), p.192-192, Article 192

2024

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Fully Epitaxial Semiconductor Photoelectrode for UV–VIS Dual-Band Photodetection

ACS photonics, 2023-08, Vol.10 (8), p.2825-2831

2023

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AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2022-09, Vol.40 (5)

2022

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Decoupling Strategy for Enhanced Syngas Generation from Photoelectrochemical CO2 Reduction

iScience, 2020-08, Vol.23 (8), p.101390-101390, Article 101390

2020

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On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures

Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers

AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode

Abnormal Photocurrent in Semiconductor p‐n Heterojunctions: Toward Multifunctional Photoelectrochemical‐Type Photonic Devices and Beyond

Extending group-III nitrides to the infrared: Recent advances in InN

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes

Photoluminescence properties of Mg-doped InN nanowires

Wafer-scale synthesis of monolayer WSe2: A multi-functional photocatalyst for efficient overall pure water splitting

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2

Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters using Al-Content Engineered Superlattice Electron Blocking Layer

Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities

Facile Semiconductor p–n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Fully Epitaxial Semiconductor Photoelectrode for UV–VIS Dual-Band Photodetection

AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Decoupling Strategy for Enhanced Syngas Generation from Photoelectrochemical CO2 Reduction

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