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SiC nanowires: material and devices

Journal of physics. D, Applied physics, 2011-04, Vol.44 (13), p.133001

2011

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Channel width effect on the operation of 4H‐SiC vertical JFETs

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600452-n/a

2017

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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Nanotechnology, 2009-07, Vol.20 (29), p.295202-295202 (6)

2009

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3C-Silicon Carbide Nanowire FET: An Experimental and Theoretical Approach

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1970-1976

2008

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High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

E3S Web of Conferences, 2017, Vol.16, p.12001

2017

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Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Applied surface science, 2007-07, Vol.253 (19), p.7912-7916

2007

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Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Semiconductor science and technology, 2009-05, Vol.24 (5), p.055006-055006 (8)

2009

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Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Key engineering materials, 2023-05, Vol.946, p.111-118

2023

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On application of electrochemical capacitance–voltage profiling technique for n-type SiC

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075039

2008

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Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Materials science forum, 2010-01, Vol.645-648, p.1235-1238

2010

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Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Materials science forum, 2022-05, Vol.1062, p.608-612

2022

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High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

Solid-state electronics, 2002-11, Vol.46 (11), p.1975-1981

2002

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Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

Applied physics letters, 2000-09, Vol.77 (10), p.1452-1454

2000

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Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques

Physica status solidi. A, Applications and materials science, 2008-11, Vol.205 (11), p.2536-2540

2008

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Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

Solid-state electronics, 2002-11, Vol.46 (11), p.1959-1963

2002

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Microwave p-i-n diodes and switches based on 4H-SiC

IEEE electron device letters, 2006-02, Vol.27 (2), p.108-110

2006

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Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

Materials science forum, 2009-01, Vol.615-617, p.651-654

2009

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Via Hole Formation in Silicon Carbide by Laser Micromachining

Materials science forum, 2006-10, Vol.527-529, p.1119-1122

2006

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On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Materials science forum, 2018-06, Vol.924, p.657-660

2018

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A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Materials science forum, 2018-06, Vol.924, p.649-652

2018

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Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.370-373

2001

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Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H–SiC

Optical materials, 2008-01, Vol.30 (5), p.746-748

2008

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Microwave Modulators Based on 4H-SiC p-i-n Diodes

IEEE transactions on microwave theory and techniques, 2008-04, Vol.56 (4), p.803-808

2008

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Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.660-664

2005

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Crystal Quality Evaluation by Electrochemical Preferential Etching of p-Type SiC Crystals

Journal of the Electrochemical Society, 2000, Vol.147 (7), p.2744

2000

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SiC nanowires: material and devices

Channel width effect on the operation of 4H‐SiC vertical JFETs

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

3C-Silicon Carbide Nanowire FET: An Experimental and Theoretical Approach

High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

On application of electrochemical capacitance–voltage profiling technique for n-type SiC

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques

Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

Microwave p-i-n diodes and switches based on 4H-SiC

Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC

Via Hole Formation in Silicon Carbide by Laser Micromachining

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H–SiC

Microwave Modulators Based on 4H-SiC p-i-n Diodes

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Crystal Quality Evaluation by Electrochemical Preferential Etching of p-Type SiC Crystals

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