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Towards forming-free resistive switching in oxygen engineered HfO2−x

Applied physics letters, 2014-02, Vol.104 (6)

2014

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X-ray measurement of the tetragonal distortion of the oxide buffer layer in Ge/Pr2O3/Si(1 1 1) heteroepitaxial structures

Journal of physics. D, Applied physics, 2008-07, Vol.41 (13), p.135308-135308 (7)

Zaumseil, P

2008

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Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

Journal of Raman spectroscopy, 2020-06, Vol.51 (6), p.989-996

2020

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Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Journal of applied physics, 2013-01, Vol.113 (1)

2013

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GeSn/Ge multiquantum well photodetectors on Si substrates

Optics letters, 2014-08, Vol.39 (16), p.4711

2014

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High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Journal of applied physics, 2012-04, Vol.111 (7), p.073518-073518-6

2012

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The thermal stability of epitaxial GeSn layers

APL materials, 2018-07, Vol.6 (7), p.076108-076108-10

2018

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Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties

Nanotechnology, 2017-05, Vol.28 (21), p.215702-215702

2017

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Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

Semiconductor science and technology, 2015-05, Vol.30 (5), p.55003

2015

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Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

Applied physics letters, 2016-11, Vol.109 (20)

2016

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Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading

Semiconductor science and technology, 2019-01, Vol.34 (1), p.14005

2019

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Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

Applied physics letters, 2015-12, Vol.107 (26)

2015

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Optical properties and band gap characterization of high dielectric constant oxides

Thin solid films, 2012-05, Vol.520 (14), p.4532-4535

2012

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About the strain state of different metal oxide layers epitaxially grown on Si(1 1 1)

Journal of physics. D, Applied physics, 2011-02, Vol.44 (5), p.055403-055403

2011

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Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer

Journal of applied physics, 2017-06, Vol.121 (21)

2017

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Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

Journal of applied physics, 2016-07, Vol.120 (4)

2016

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Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy

Applied physics letters, 2015-02, Vol.106 (7)

2015

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Fully coherent growth of Ge on free-standing Si(001) nanomesas

Physical review. B, Condensed matter and materials physics, 2014-01, Vol.89 (1), Article 014101

2014

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Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth

Nanotechnology, 2015-09, Vol.26 (35), p.355707-10

2015

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Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Nanotechnology, 2012-11, Vol.23 (46), p.465708-465708

2012

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GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Journal of applied physics, 2012-04, Vol.111 (7), p.073515-073515-9

2012

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Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)

Journal of applied physics, 2010-09, Vol.108 (6)

2010

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The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars

Nanotechnology, 2012-09, Vol.23 (35), p.355706-355706

2012

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High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(1 1 1) heterostructures

Journal of physics. D, Applied physics, 2011-08, Vol.44 (31)

2011

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Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

Applied physics letters, 2011-11, Vol.99 (21)

2011

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Towards forming-free resistive switching in oxygen engineered HfO2−x

X-ray measurement of the tetragonal distortion of the oxide buffer layer in Ge/Pr2O3/Si(1 1 1) heteroepitaxial structures

Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

GeSn/Ge multiquantum well photodetectors on Si substrates

High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

The thermal stability of epitaxial GeSn layers

Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties

Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

Dynamic SIMS, spectroscopic ellipsometry and x-ray diffractometry analysis of SiGe HBTs with Ge grading

Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

Optical properties and band gap characterization of high dielectric constant oxides

About the strain state of different metal oxide layers epitaxially grown on Si(1 1 1)

Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer

Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy

Fully coherent growth of Ge on free-standing Si(001) nanomesas

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth

Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars

High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(1 1 1) heterostructures

Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)

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