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600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

IEEE electron device letters, 2013-11, Vol.34 (11), p.1373-1375

2013

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied physics letters, 2015-02, Vol.106 (5)

2015

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High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation

IEEE electron device letters, 2013-12, Vol.34 (12), p.1497-1499

2013

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Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

IEEE electron device letters, 2013-02, Vol.34 (2), p.193-195

2013

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Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

IEEE electron device letters, 2014-07, Vol.35 (7), p.723-725

2014

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Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2785-2792

2014

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IEEE_Xplore

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

IEEE electron device letters, 2015-04, Vol.36 (4), p.318-320

2015

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IEEE_Xplore

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

IEEE electron device letters, 2013-03, Vol.34 (3), p.366-368

2013

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IEEE_Xplore

Adaptive Direction Detection in Deterministic Interference and Partially Homogeneous Noise

IEEE signal processing letters, 2017-05, Vol.24 (5), p.599-603

2017

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IEEE_Xplore

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1059-1065

2015

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Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3808-3813

2014

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IEEE_Xplore

Normally off Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.821-827

2015

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IEEE_Xplore

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.755-761

2014

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IEEE_Xplore

Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Physica status solidi. C, 2013-11, Vol.10 (11), p.1397-1400

2013

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Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation

IEEE electron device letters, 2015-08, Vol.36 (8), p.760-762

2015

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IEEE_Xplore

High- fMAX High Johnson's Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation

IEEE electron device letters, 2014, Vol.35 (3), p.315-317

2014

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Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.358-364

2020

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A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.762-768

2014

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IEEE_Xplore

Statistical Performance Analysis of the Adaptive Orthogonal Rejection Detector

IEEE signal processing letters, 2016-06, Vol.23 (6), p.873-877

2016

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IEEE_Xplore

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

IEEE electron device letters, 2013-11, Vol.34 (11), p.1373-1375

2013

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IEEE_Xplore

Biological evaluation and 3D-QSAR studies of curcumin analogues as aldehyde dehydrogenase 1 inhibitors

International journal of molecular sciences, 2014-05, Vol.15 (5), p.8795-8807

2014

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High-Quality Interface in //// MIS Structures With In Situ Pre-Gate Plasma Nitridation

IEEE electron device letters, 2013-12, Vol.34 (12), p.1497-1499

2013

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IEEE_Xplore

High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

IEEE electron device letters, 2014-03, Vol.35 (3), p.315-317

2014

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IEEE_Xplore

Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.213-216

2015

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IEEE_Xplore

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600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Adaptive Direction Detection in Deterministic Interference and Partially Homogeneous Noise

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Normally off Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation

High- fMAX High Johnson's Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation

Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

Statistical Performance Analysis of the Adaptive Orthogonal Rejection Detector

Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Biological evaluation and 3D-QSAR studies of curcumin analogues as aldehyde dehydrogenase 1 inhibitors

High-Quality Interface in //// MIS Structures With In Situ Pre-Gate Plasma Nitridation

High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

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