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Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999, p.CPD22/1-CPD22/2

1999

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Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Applied physics letters, 1998-08, Vol.73 (6), p.797-799

1998

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Dopant-selective photoenhanced wet etching of GaN

Journal of electronic materials, 1998-04, Vol.27 (4), p.282-287

1998

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Smooth n-type GaN surfaces by photoenhanced wet etching

Applied physics letters, 1998-02, Vol.72 (5), p.560-562

1998

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Dry and Wet Etching for Group III – Nitrides

MRS proceedings, 1998, Vol.537, Article G1.4

1998

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Dopant-selective photoenhanced wet etching of GaN : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.282-287

1998

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Etching for GaN laser facets and material characterization

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), 1998, Vol.1, p.364-365 vol.1

1998

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Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

Applied physics letters, 1997-12, Vol.71 (23), p.3379-3381

1997

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Special report: AI Institute for next generation food systems (AIFS)

The 2018 GaN power electronics roadmap

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off

S4-P8: Applications for epitaxial lift-off of III-V materials

Improved radiation resistance of epitaxial lift-off inverted metamorphic solar cells

Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

Connecting visually-impaired people to friends through wireless sensor networks

Large-area, epitaxial lift-off, inverted metamorphic solar cells

InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

Lightweight, low cost InGaP/GaAs dual-junction solar cells on 100 mm epitaxial liftoff (ELO) wafers

GaAs microcavity channel-dropping filter based on a race-track resonator

Gate recessing of GaN MESFETs using photoelectrochemical wet etching

Etched cavity InGaAsP-InP waveguide Fabry-Perot filter tunable by current injection

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Dry and Wet Etching for Group III – Nitrides

Etched cavity InGaAsP/InP waveguide Fabry-Perot filter tunable by current injectior

Ultra-compact directional couplers and race-track microcavity resonators as building blocks for WDM devices

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Dopant-selective photoenhanced wet etching of GaN

Smooth n-type GaN surfaces by photoenhanced wet etching

Dry and Wet Etching for Group III – Nitrides

Dopant-selective photoenhanced wet etching of GaN : III-V nitrides and silicon carbide

Etching for GaN laser facets and material characterization

Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

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