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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B 2 O 3

Journal of physics. Conference series, 2011-02, Vol.281, p.12011

2011

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B sub(2)O sub(3)

Journal of physics. Conference series, 2011-01, Vol.281, p.1-6

2011

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B2O3

Journal of physics. Conference series, 2011-02, Vol.281 (1), p.012011

2011

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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

Applied physics express, 2013-02, Vol.6 (2), p.25505

2013

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Cyclodextrin-Isolated Alkynylpyrenes as UV-Stable and Blue-Light-Emitting Molecules Even in Condensed States

Organic letters, 2016-05, Vol.18 (9), p.1960-1963

2016

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Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Journal of crystal growth, 2010-09, Vol.312 (19), p.2783-2787

2010

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Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Doping effects on the stability of stacking faults in silicon crystals

Thin solid films, 2012-02, Vol.520 (8), p.3296-3299

2012

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A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Angewandte Chemie, 2014-12, Vol.126 (52), p.14620-14624

2014

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A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Angewandte Chemie International Edition, 2014-12, Vol.53 (52), p.14392-14396

International ed. in English, 2014

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Effective Detection Method for Misoriented Grains in Nonpolar GaN Layers and Future Prospect

Materia Japan, 2013, Vol.52(6), pp.273-277

2013

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Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

AIP advances, 2015-07, Vol.5 (7), p.077131-077131-13

2015

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Erratum: “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers

Materials transactions, 2012, Vol.53 (11), p.1881-1884

2012

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Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Key engineering materials, 2012-01, Vol.508, p.220-223

2012

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Impurity effects on the generation and velocity of dislocations in Ge

Journal of applied physics, 2011-06, Vol.109 (11), p.113502-113502-5

2011

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Infantile umbilical hernia tape fixation method without compression materials

Journal of general and family medicine, 2023-07, Vol.24 (4), p.223-230

2023

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Interaction of dopant atoms with stacking faults in silicon

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3006-3008

2012

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Misoriented grains with a preferential orientation in a-plane oriented GaN layers

Journal of crystal growth, 2011-11, Vol.334 (1), p.80-83

2011

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Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Journal of crystal growth, 2012-08, Vol.352 (1), p.173-176

2012

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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.84-87

2014

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Optical Properties of Bulk Silicon Germanium in the Near Infrared Evaluated By Spectroscopic Ellipsometry

Meeting abstracts (Electrochemical Society), 2021-10, Vol.MA2021-02 (12), p.629-629

2021

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Optical Response of Dislocations in w-ZnO Revealed by In-situ Optical Spectroscopy in a TEM(Opto-TEM)

Materia Japan, 2009, Vol.48(12), pp.625-625

2009

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Opto-TEM 法による w-ZnO 中の転位の光学応答解析

まてりあ, 2009, Vol.48(12), pp.625-625

2009

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Oxygen doped Ge crystals Czochralski-grown from the B 2O 3-fully-covered melt

Microelectronic engineering, 2011, Vol.88 (4), p.496-498

2011

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Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B 2 O 3

Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B sub(2)O sub(3)

Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B2O3

Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

Cyclodextrin-Isolated Alkynylpyrenes as UV-Stable and Blue-Light-Emitting Molecules Even in Condensed States

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

Doping effects on the stability of stacking faults in silicon crystals

A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Effective Detection Method for Misoriented Grains in Nonpolar GaN Layers and Future Prospect

Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

Erratum: “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]

Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers

Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Impurity effects on the generation and velocity of dislocations in Ge

Infantile umbilical hernia tape fixation method without compression materials

Interaction of dopant atoms with stacking faults in silicon

Misoriented grains with a preferential orientation in a-plane oriented GaN layers

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Optical Properties of Bulk Silicon Germanium in the Near Infrared Evaluated By Spectroscopic Ellipsometry

Optical Response of Dislocations in w-ZnO Revealed by In-situ Optical Spectroscopy in a TEM(Opto-TEM)

Opto-TEM 法による w-ZnO 中の転位の光学応答解析

Oxygen doped Ge crystals Czochralski-grown from the B 2O 3-fully-covered melt

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