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A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Angewandte Chemie (International ed.), 2014-12, Vol.53 (52), p.14392-14396

International ed. in English, 2014

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Cyclodextrin-Isolated Alkynylpyrenes as UV-Stable and Blue-Light-Emitting Molecules Even in Condensed States

Organic letters, 2016-05, Vol.18 (9), p.1960-1963

2016

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A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Angewandte Chemie, 2014-12, Vol.126 (52), p.14620-14624

2014

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Regional Differences in Quality of Care at Palliative Care Units (PCUs), and Complicated Grief and Depression of Bereaved Family Members: Results from a Nationwide Bereavement Survey in Japan

Palliative Care Research, 2018, Vol.13(3), pp.235-243

2018

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緩和ケア病棟のケアの質および遺族の悲嘆・うつの地域差：全国遺族調査の結果から

Palliative Care Research, 2018, Vol.13(3), pp.235-243

2018

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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.84-87

2014

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Infantile umbilical hernia tape fixation method without compression materials

Journal of general and family medicine, 2023-07, Vol.24 (4), p.223-230

2023

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Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Impurity effects on the generation and velocity of dislocations in Ge

Journal of applied physics, 2011-06, Vol.109 (11), p.113502-113502-5

2011

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Erratum: “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

AIP advances, 2015-07, Vol.5 (7), p.077131-077131-13

2015

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Doping effects on the stability of stacking faults in silicon crystals

Thin solid films, 2012-02, Vol.520 (8), p.3296-3299

2012

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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

Applied physics express, 2013-02, Vol.6 (2), p.25505

2013

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Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Journal of crystal growth, 2012-08, Vol.352 (1), p.173-176

2012

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Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Journal of crystal growth, 2010-09, Vol.312 (19), p.2783-2787

2010

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Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2886-2888

2012

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Misoriented grains with a preferential orientation in a-plane oriented GaN layers

Journal of crystal growth, 2011-11, Vol.334 (1), p.80-83

2011

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Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers

Materials transactions, 2012, Vol.53 (11), p.1881-1884

2012

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Interaction of dopant atoms with stacking faults in silicon

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3006-3008

2012

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Three-dimensional evaluation of gettering ability of ?3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Applied physics letters, 2013-01, Vol.103 (10)

2013

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Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Key engineering materials, 2012-01, Vol.508, p.220-223

2012

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Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2932-2934

2012

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Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt

Microelectronic engineering, 2011-04, Vol.88 (4), p.496-498

2011

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Oxygen doped Ge crystals Czochralski-grown from the B sub(2)O sub(3)-fully-covered melt

Microelectronic engineering, 2011-04, Vol.88 (4), p.496-498

2011

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A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Cyclodextrin-Isolated Alkynylpyrenes as UV-Stable and Blue-Light-Emitting Molecules Even in Condensed States

A Doubly Alkynylpyrene-Threaded [4]Rotaxane That Exhibits Strong Circularly Polarized Luminescence from the Spatially Restricted Excimer

Regional Differences in Quality of Care at Palliative Care Units (PCUs), and Complicated Grief and Depression of Bereaved Family Members: Results from a Nationwide Bereavement Survey in Japan

緩和ケア病棟のケアの質および遺族の悲嘆・うつの地域差：全国遺族調査の結果から

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

Infantile umbilical hernia tape fixation method without compression materials

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

Impurity effects on the generation and velocity of dislocations in Ge

Erratum: “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]

Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

Doping effects on the stability of stacking faults in silicon crystals

Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures

Misoriented grains with a preferential orientation in a-plane oriented GaN layers

Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers

Interaction of dopant atoms with stacking faults in silicon

Three-dimensional evaluation of gettering ability of ?3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt

Oxygen doped Ge crystals Czochralski-grown from the B sub(2)O sub(3)-fully-covered melt

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