UB Paderborn / Katalog / Suche / in CDI

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

Solid-state electronics, 2012-07, Vol.73, p.60-63

2012

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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox/\hbox Insulators

IEEE electron device letters, 2009-07, Vol.30 (7), p.715-717

2009

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Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

IEEE electron device letters, 2009-09, Vol.30 (9), p.999-1001

2009

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Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers

IEEE electron device letters, 2008-04, Vol.29 (4), p.386-388

2008

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Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions

IEEE electron device letters, 2009-06, Vol.30 (6), p.681-683

2009

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Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers

IEEE transactions on electron devices, 2008-07, Vol.55 (7), p.1708-1713

2008

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A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

IEEE electron device letters, 2006-12, Vol.27 (12), p.978-980

2006

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Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using \hbox/\hbox Dielectrics

IEEE electron device letters, 2009-12, Vol.30 (12), p.1287-1289

2009

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Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using [Formula Omitted] Dielectrics

IEEE electron device letters, 2009-12, Vol.30 (12), p.1287

2009

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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked [Formula Omitted] Insulators

IEEE electron device letters, 2009-07, Vol.30 (7), p.715

2009

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Low- V TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

IEEE electron device letters, 2009-01, Vol.30 (1), p.75-77

2009

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Bipolar switching characteristics of low-power Geo resistive memory

Solid-state electronics, 2011-08, Vol.62 (1), p.90-93

2011

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Higher- κ titanium dioxide incorporating LaAlO 3 as dielectrics for MIM capacitors

Solid-state electronics, 2010, Vol.54 (6), p.646-649

2010

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Low-[Formula Omitted] TaN/HfLaO [Formula Omitted]-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

IEEE electron device letters, 2009-01, Vol.30 (1), p.75-77

2009

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Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

Solid-state electronics, 2010-06, Vol.54 (6), p.646-649

2010

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High Density and Low Leakage Current in [Formula Omitted] MIM Capacitors Processed at 300 [Formula Omitted]

IEEE electron device letters, 2008-08, Vol.29 (8), p.845

2008

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Comparison of MONOS Memory Device Integrity When Using \hbox\hbox\hbox Trapping Layers With Different N Compositions

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1417-1423

2008

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Comparison of MONOS Memory Device Integrity When Using [Formula Omitted] Trapping Layers With Different N Compositions

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1417

2008

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Expression of a bi-functional and thermostable amylopullulanase in transgenic rice seeds leads to autohydrolysis and altered composition of starch

Molecular breeding, 2005-02, Vol.15 (2), p.125-143

2005

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Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1728-1732

2009

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Flat band voltage control on low V t metal-gate/high- κ CMOSFETs with small EOT (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1728-1732

2009

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High Density and Low Leakage Current in \hbox MIM Capacitors Processed at 300 ^ \hbox

IEEE electron device letters, 2008-08, Vol.29 (8), p.845-847

2008

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Improved 150°C Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing

2008 Device Research Conference, 2008, p.61-62

2008

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Good 150°C retention and fast erase characteristics in charge-trap-engineered memory having a scaled Si3N4 layer

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Improved retention and cycling characteristics of MONOS memory using Charge-Trapping-Engineering

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2009, p.641-645

2009

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Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox/\hbox Insulators

Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers

Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions

Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers

A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using \hbox/\hbox Dielectrics

Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using [Formula Omitted] Dielectrics

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked [Formula Omitted] Insulators

Low- V TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

Bipolar switching characteristics of low-power Geo resistive memory

Higher- κ titanium dioxide incorporating LaAlO 3 as dielectrics for MIM capacitors

Low-[Formula Omitted] TaN/HfLaO [Formula Omitted]-MOSFETs Using Low-Temperature Formed Source-Drain Junctions

Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

High Density and Low Leakage Current in [Formula Omitted] MIM Capacitors Processed at 300 [Formula Omitted]

Comparison of MONOS Memory Device Integrity When Using \hbox\hbox\hbox Trapping Layers With Different N Compositions

Comparison of MONOS Memory Device Integrity When Using [Formula Omitted] Trapping Layers With Different N Compositions

Expression of a bi-functional and thermostable amylopullulanase in transgenic rice seeds leads to autohydrolysis and altered composition of starch

Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Flat band voltage control on low V t metal-gate/high- κ CMOSFETs with small EOT (Invited Paper)

High Density and Low Leakage Current in \hbox MIM Capacitors Processed at 300 ^ \hbox

Improved 150°C Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing

Good 150°C retention and fast erase characteristics in charge-trap-engineered memory having a scaled Si3N4 layer

Improved retention and cycling characteristics of MONOS memory using Charge-Trapping-Engineering

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