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Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Applied physics letters, 1998-08, Vol.73 (6), p.797-799

1998

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Highly anisotropic photoenhanced wet etching of n-type GaN

Applied physics letters, 1997-10, Vol.71 (15), p.2151-2153

1997

Volltextzugriff (PDF)

Smooth n-type GaN surfaces by photoenhanced wet etching

Applied physics letters, 1998-02, Vol.72 (5), p.560-562

1998

Volltextzugriff (PDF)

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Applied physics letters, 1999-06, Vol.74 (23), p.3537-3539

1999

Volltextzugriff (PDF)

InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002125-002128

2010

Volltextzugriff (PDF)

The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

Volltextzugriff (PDF)

Dopant-selective photoenhanced wet etching of GaN

Journal of electronic materials, 1998-04, Vol.27 (4), p.282-287

1998

Volltextzugriff (PDF)

Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

Volltextzugriff (PDF)

GaAs microcavity channel-dropping filter based on a race-track resonator

IEEE photonics technology letters, 1999-12, Vol.11 (12), p.1620-1622

1999

Volltextzugriff (PDF)

Broad-area photoelectrochemical etching of GaN

Electronics letters, 1997, Vol.33 (3), p.245

1997

Volltextzugriff (PDF)

Characteristics of chemically assisted ion beam etching of gallium nitride

Applied physics letters, 1994-08, Vol.65 (7), p.889-891

1994

Volltextzugriff (PDF)

Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

IEEE journal of photovoltaics, 2013-04, Vol.3 (2), p.899-903

2013

Volltextzugriff (PDF)

Lightweight, low cost InGaP/GaAs dual-junction solar cells on 100 mm epitaxial liftoff (ELO) wafers

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.002065-002067

2009

Volltextzugriff (PDF)

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

Volltextzugriff (PDF)

Quantitative survey of narirutin, naringin, hesperidin, and neohesperidin in citrus

Journal of agricultural and food chemistry, 1987-11, Vol.35 (6), p.1027-1030

1987

Volltextzugriff (PDF)

Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters

IEEE photonics technology letters, 1996-10, Vol.8 (10), p.1340-1342

1996

Volltextzugriff (PDF)

Etched cavity InGaAsP-InP waveguide Fabry-Perot filter tunable by current injection

Journal of lightwave technology, 1999-10, Vol.17 (10), p.1890-1895

1999

Volltextzugriff (PDF)

Gate recessing of GaN MESFETs using photoelectrochemical wet etching

Electronics letters, 1999-11, Vol.35 (24), p.2140-2141

1999

Volltextzugriff (PDF)

Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides

Electronics letters, 1996-02, Vol.32 (4), p.323

1996

Volltextzugriff (PDF)

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

IEEE photonics technology letters, 1997-11, Vol.9 (11), p.1445-1447

1997

Volltextzugriff (PDF)

Chemically assisted ion beam etching of gallium nitride

Journal of electronic materials, 1995-04, Vol.24 (4), p.229-234

1995

Volltextzugriff (PDF)

Photoelectrochemical etching of GaN

MRS proceedings, 1997, Vol.468, Article 349

1997

Volltextzugriff (PDF)

Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

Applied physics letters, 1997-12, Vol.71 (23), p.3379-3381

1997

Volltextzugriff (PDF)

Four-layer resist process for asymmetric gate recess

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.317-320

1996

Volltextzugriff (PDF)

Self-aligned sidewall gated resonant tunneling transistors

Applied physics letters, 1996-07, Vol.69 (3), p.374-376

1996

Volltextzugriff (PDF)

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Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Highly anisotropic photoenhanced wet etching of n-type GaN

Smooth n-type GaN surfaces by photoenhanced wet etching

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

The 2018 GaN power electronics roadmap

Dopant-selective photoenhanced wet etching of GaN

Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off

GaAs microcavity channel-dropping filter based on a race-track resonator

Broad-area photoelectrochemical etching of GaN

Characteristics of chemically assisted ion beam etching of gallium nitride

Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

Lightweight, low cost InGaP/GaAs dual-junction solar cells on 100 mm epitaxial liftoff (ELO) wafers

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

Quantitative survey of narirutin, naringin, hesperidin, and neohesperidin in citrus

Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters

Etched cavity InGaAsP-InP waveguide Fabry-Perot filter tunable by current injection

Gate recessing of GaN MESFETs using photoelectrochemical wet etching

Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

Chemically assisted ion beam etching of gallium nitride

Photoelectrochemical etching of GaN

Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

Four-layer resist process for asymmetric gate recess

Self-aligned sidewall gated resonant tunneling transistors

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