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Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices

IEEE transactions on industrial electronics (1982), 2024-09, Vol.71 (9), p.11706-11709

2024

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Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices

IEEE transactions on power electronics, 2023-06, Vol.38 (6), p.6891-6896

2023

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Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5448-5453

2020

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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

IEEE electron device letters, 2016-04, Vol.37 (4), p.474-477

2016

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H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs

IEEE transactions on industrial electronics (1982), 2023-02, Vol.70 (2), p.1532-1541

2023

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A 2.5-D Angularly Stable Frequency Selective Surface Using Via-Based Structure for 5G EMI Shielding

IEEE transactions on electromagnetic compatibility, 2018-06, Vol.60 (3), p.768-775

2018

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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1853-1860

2016

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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1489-1494

2021

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Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE electron device letters, 2017-12, Vol.38 (12), p.1696-1699

2017

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Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH₃ Plasma and Microwave Annealing

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-5

2020

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Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.200-205

2024

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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

IEEE electron device letters, 2016-11, Vol.37 (11), p.1415-1417

2016

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A Low-Profile Broadband Bandpass Frequency Selective Surface With Two Rapid Band Edges for 5G Near-Field Applications

IEEE transactions on electromagnetic compatibility, 2017-04, Vol.59 (2), p.670-676

2017

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Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology

IEEE electron device letters, 2019-03, Vol.40 (3), p.467-470

2019

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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1122-1129

2015

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ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1

2023

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Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3132-3141

2013

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Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2175-2178

2023

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GaN-based mini-LED matrix applied to multi-functional forward lighting

Scientific reports, 2022-04, Vol.12 (1), p.6444-6444, Article 6444

2022

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Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2199-2207

2014

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Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs

Scientific reports, 2024-04, Vol.14 (1), p.8151-8151, Article 8151

2024

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A Novel Miniaturized Multiband Strong Coupled-FSS Structure Insensitive to Almost All Angles and All Polarizations

IEEE transactions on antennas and propagation, 2021-12, Vol.69 (12), p.8470-8478

2021

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1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

IEEE transactions on nanotechnology, 2023-01, Vol.22, p.1-6

2023

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices

Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices

Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs

A 2.5-D Angularly Stable Frequency Selective Surface Using Via-Based Structure for 5G EMI Shielding

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH₃ Plasma and Microwave Annealing

Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

A Low-Profile Broadband Bandpass Frequency Selective Surface With Two Rapid Band Edges for 5G Near-Field Applications

Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

GaN-based mini-LED matrix applied to multi-functional forward lighting

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs

A Novel Miniaturized Multiband Strong Coupled-FSS Structure Insensitive to Almost All Angles and All Polarizations

1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

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