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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Variable-wavelength frequency-domain terahertz ellipsometry

Review of scientific instruments, 2010-02, Vol.81 (2), p.023101-023101-7

2010

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Terahertz ellipsometry and terahertz optical-Hall effect

Thin solid films, 2011-02, Vol.519 (9), p.2593-2600

2011

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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Physical review letters, 2013-08, Vol.111 (7), p.077402-077402

2013

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Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation

Journal of applied physics, 1998-03, Vol.83 (6), p.3323-3336

1998

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Giant photoresistivity and optically controlled switching in self-assembled nanowires

Applied physics letters, 2001-12, Vol.79 (26), p.4423-4425

2001

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Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry

Journal of applied physics, 2000-11, Vol.88 (9), p.5166-5174

2000

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UV–vis–infrared optical and AFM study of spin-cast chitosan films

Colloids and surfaces, B, Biointerfaces, 2005-07, Vol.43 (3), p.131-137

2005

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Physical and chemical properties of sputter-deposited TaCxNy films

Journal of physics. Condensed matter, 2006-02, Vol.18 (6), p.1977-1986

2006

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Vacuum ultra-violet spectroscopic ellipsometry study of single- and multi-phase nitride protective films

Journal of physics. Condensed matter, 2006-08, Vol.18 (32), p.S1691-S1701

2006

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Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

Applied physics letters, 2011-01, Vol.98 (4), p.041906-041906-3

2011

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Optical properties of amorphous and polycrystalline tantalum oxide thin films measured by spectroscopic ellipsometry from 0.03 to 8.5 eV

Thin solid films, 2001-06, Vol.388 (1), p.283-289

2001

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Optical properties of bulk and thin-film SrTiO3 on Si and Pt

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-07, Vol.18 (4), p.2242-2254

2000

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Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells

Thin solid films, 2010-01, Vol.518 (7), p.1830-1834

2010

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Self-organization in porous 6H–SiC

Journal of materials research, 2000-09, Vol.15 (9), p.1860-1863

2000

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Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2011-02, Vol.98 (9)

2011

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Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Applied physics letters, 2009-07, Vol.95 (3)

2009

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Infrared optical properties and AFM of spin-cast chitosan films chemically modified with 1,2 Epoxy-3-phenoxy-propane

Colloids and surfaces, B, Biointerfaces, 2005-11, Vol.46 (1), p.26-31

2005

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Carbonic anhydrase adsorption in porous silicon studied with infrared ellipsometry

Physica status solidi. A, Applications and materials science, 2005-06, Vol.202 (8), p.1688-1692

2005

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Vacuum ultraviolet optical analysis of spin-cast chitosan films modified by succinic anhydride and glycidyl phenyl ether

Surface and interface analysis, 2007-09, Vol.39 (9), p.747-751

2007

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Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Journal of applied physics, 1999-08, Vol.86 (4), p.2025-2033

1999

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Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect

Physical review letters, 2013-08, Vol.111 (7), Article 077402

2013

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Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis

Journal of applied physics, 1995-05, Vol.77 (9), p.4677-4687

1995

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Effects of ion concentration on refractive indices of fluids measured by the minimum deviation technique

Physica status solidi. C, 2008-05, Vol.5 (5), p.1249-1252

2008

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Infrared switching electrochromic devices based on tungsten oxide

Journal of applied physics, 2000-11, Vol.88 (10), p.5777-5784

2000

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Variable-wavelength frequency-domain terahertz ellipsometry

Terahertz ellipsometry and terahertz optical-Hall effect

Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect

Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation

Giant photoresistivity and optically controlled switching in self-assembled nanowires

Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry

UV–vis–infrared optical and AFM study of spin-cast chitosan films

Physical and chemical properties of sputter-deposited TaCxNy films

Vacuum ultra-violet spectroscopic ellipsometry study of single- and multi-phase nitride protective films

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

Optical properties of amorphous and polycrystalline tantalum oxide thin films measured by spectroscopic ellipsometry from 0.03 to 8.5 eV

Optical properties of bulk and thin-film SrTiO3 on Si and Pt

Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells

Self-organization in porous 6H–SiC

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Infrared optical properties and AFM of spin-cast chitosan films chemically modified with 1,2 Epoxy-3-phenoxy-propane

Carbonic anhydrase adsorption in porous silicon studied with infrared ellipsometry

Vacuum ultraviolet optical analysis of spin-cast chitosan films modified by succinic anhydride and glycidyl phenyl ether

Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect

Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis

Effects of ion concentration on refractive indices of fluids measured by the minimum deviation technique

Infrared switching electrochromic devices based on tungsten oxide

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