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Synaptic electronics: materials, devices and applications

Nanotechnology, 2013-09, Vol.24 (38), p.382001-382001

2013

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Electrical tuning of phase-change antennas and metasurfaces

Nature nanotechnology, 2021-06, Vol.16 (6), p.667-672

2021

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MoS₂ transistors with 1-nanometer gate lengths

Science (American Association for the Advancement of Science), 2016-10, Vol.354 (6308), p.99-102

2016

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Memory leads the way to better computing

Nature nanotechnology, 2015-03, Vol.10 (3), p.191-194

2015

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A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.3061-3069

2015

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The End of Moore's Law: A New Beginning for Information Technology

Computing in science & engineering, 2017-03, Vol.19 (2), p.41-50

2017

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Graphene and two-dimensional materials for silicon technology

Nature (London), 2019-09, Vol.573 (7775), p.507-518

2019

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Artificial optic-neural synapse for colored and color-mixed pattern recognition

Nature communications, 2018-11, Vol.9 (1), p.5106-8, Article 5106

2018

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Phase-Change Memory-Towards a Storage-Class Memory

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4374-4385

2017

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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature nanotechnology, 2019-08, Vol.14 (8), p.776-782

2019

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Face classification using electronic synapses

Nature communications, 2017-05, Vol.8 (1), p.15199-15199, Article 15199

2017

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Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

Nature (London), 2017-07, Vol.547 (7661), p.74-78

2017

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A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

Advanced materials (Weinheim), 2013-03, Vol.25 (12), p.1774-1779

2013

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Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

Nano letters, 2016-01, Vol.16 (1), p.276-281

2016

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How 2D semiconductors could extend Moore's law

Nature (London), 2019-03, Vol.567 (7747), p.169-170

2019

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Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Nature (London), 2020-03, Vol.579 (7798), p.219-223

2020

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A Compact Model for Metal-Oxide Resistive Random Access Memory With Experiment Verification

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1884-1892

2016

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Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Nano letters, 2012-05, Vol.12 (5), p.2179-2186

2012

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Metal oxide-resistive memory using graphene-edge electrodes

Nature communications, 2015-09, Vol.6 (1), p.8407-8407, Article 8407

2015

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Large-Area Assembly of Densely Aligned Single-Walled Carbon Nanotubes Using Solution Shearing and Their Application to Field-Effect Transistors

Advanced materials (Weinheim), 2015-04, Vol.27 (16), p.2656-2662

2015

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HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

ACS nano, 2013-03, Vol.7 (3), p.2320-2325

2013

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Ultralow-switching current density multilevel phase-change memory on a flexible substrate

Science (American Association for the Advancement of Science), 2021-09, Vol.373 (6560), p.1243-1247

2021

Volltextzugriff (PDF)

On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1172-1182

2012

Volltextzugriff (PDF)

Carbon nanotube transistors: Making electronics from molecules

Science (American Association for the Advancement of Science), 2022-11, Vol.378 (6621), p.726-732

2022

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Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1352-1360

2011

Volltextzugriff (PDF)

1 – 25 von 52.269

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Synaptic electronics: materials, devices and applications

Electrical tuning of phase-change antennas and metasurfaces

MoS₂ transistors with 1-nanometer gate lengths

Memory leads the way to better computing

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements

The End of Moore's Law: A New Beginning for Information Technology

Graphene and two-dimensional materials for silicon technology

Artificial optic-neural synapse for colored and color-mixed pattern recognition

Phase-Change Memory-Towards a Storage-Class Memory

Optoelectronic resistive random access memory for neuromorphic vision sensors

Face classification using electronic synapses

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

How 2D semiconductors could extend Moore's law

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

A Compact Model for Metal-Oxide Resistive Random Access Memory With Experiment Verification

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Metal oxide-resistive memory using graphene-edge electrodes

Large-Area Assembly of Densely Aligned Single-Walled Carbon Nanotubes Using Solution Shearing and Their Application to Field-Effect Transistors

HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Ultralow-switching current density multilevel phase-change memory on a flexible substrate

On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology

Carbon nanotube transistors: Making electronics from molecules

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

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