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On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE

Journal of crystal growth, 2011-01, Vol.315 (1), p.220-223

2011

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Application of X-ray scattering methods to the analysis of Si-based heterostructures

Thin solid films, 2004-02, Vol.450 (1), p.138-142

Woitok, J.F.

2004

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Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Journal of crystal growth, 2004-12, Vol.272 (1), p.500-505

2004

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Journal of crystal growth, 2010-05, Vol.312 (11), p.1823-1827

2010

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

Journal of crystal growth, 2011-01, Vol.315 (1), p.246-249

2011

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High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers

Journal of materials science. Materials in electronics, 2001-06, Vol.12 (4-6), p.295-298

Woitok, J F

2001

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Dislocation density assessment via X-ray GaN rocking curve scans

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1787-1789

2010

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Structural characterization of highly boron doped SiGe/Si heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.216-220

2002

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Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers

Applied surface science, 2006-11, Vol.253 (3), p.1323-1329

2006

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Quaternary nitride heterostructure field effect transistors

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2001-2003

2010

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Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1750-1752

2010

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In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2104-2106

2010

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Si(111) as alternative substrate for AlGaN/GaN HEMT

Physica status solidi. C, 2003-12 (7), p.2385-2388

2003

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Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

Journal of applied spectroscopy, 2008, Vol.75 (1), p.96-103

2008

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates

Journal of crystal growth, 2010-05, Vol.312 (11), p.1823-1827

2010

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates)

Journal of crystal growth, 2011-01, Vol.315 (1), p.246-249

2011

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Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S482-S485

2009

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Impact of nitridation on structural and optical properties of MOVPE‐grown m‐plane GaN layers on LiAlO 2

Physica status solidi. C, 2009-06, Vol.6 (S2)

2009

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Die Unterscheidung zwischen intrazerebralem iodinierten Kontrastmittel und intrazerebralen Blutungen mittels Magnetresonanztomographie im invitro-Versuch sowie im Tiermodell

Clinical neuroradiology (Munich), 2013-09, Vol.23 (S1), p.90

2013

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Die Unterscheidung zwischen intrazerebralem iodinierten Kontrastmittel und intrazerebralen Blutungen mittels Magnetresonanztomographie im invitro-Versuch sowie im Tiermodell

Clinical neuroradiology (Munich), 2013-09, Vol.23 (S1), p.90

2013

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Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.459-462

1994

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On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE

Application of X-ray scattering methods to the analysis of Si-based heterostructures

Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers

Dislocation density assessment via X-ray GaN rocking curve scans

Structural characterization of highly boron doped SiGe/Si heterostructures

Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers

Quaternary nitride heterostructure field effect transistors

Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates

In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

Si(111) as alternative substrate for AlGaN/GaN HEMT

Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates

Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates)

Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2

Impact of nitridation on structural and optical properties of MOVPE‐grown m‐plane GaN layers on LiAlO 2

Die Unterscheidung zwischen intrazerebralem iodinierten Kontrastmittel und intrazerebralen Blutungen mittels Magnetresonanztomographie im invitro-Versuch sowie im Tiermodell

Die Unterscheidung zwischen intrazerebralem iodinierten Kontrastmittel und intrazerebralen Blutungen mittels Magnetresonanztomographie im invitro-Versuch sowie im Tiermodell

Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP

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