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Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.578-584

2008

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Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Scientific reports, 2017-10, Vol.7 (1), p.14146-8, Article 14146

2017

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Quantitative analysis of nano-defects in thin film encapsulation layer by Cu electrodeposition

Applied surface science, 2018-09, Vol.453, p.31-36

2018

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Advanced poly-Si TFT with fin-like channels by ELA

IEEE electron device letters, 2006-05, Vol.27 (5), p.357-359

2006

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Advanced materials (Weinheim), 2008-03, Vol.20 (5), p.924-928

2008

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2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

2007 IEEE International Electron Devices Meeting, 2007, p.771-774

2007

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Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

Organic electronics, 2017-02, Vol.41, p.259-265

2017

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Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

Journal of the Korean Physical Society, 2006, 48(I), , pp.47-50

2006

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33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

SID International Symposium Digest of technical papers, 2005-05, Vol.36 (1), p.1258-1261

2005

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Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization

Japanese Journal of Applied Physics, 2006-10, Vol.45 (10R), p.7682

2006

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Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

Journal of the Korean Physical Society, 2006-01, p.32-34

2006

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Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

Journal of the Korean Physical Society, 2006-01, p.47-50

2006

Volltextzugriff (PDF)

Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

Journal of the Korean Physical Society, 2006, 48(I), , pp.32-34

2006

Volltextzugriff (PDF)

The Preparation of a Fatigue-Free Bi 4 Ti 3 O 12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Integrated ferroelectrics, 2004-01, Vol.65 (1), p.183-192

2004

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Investigation of the Defect Size and Density in Thin SiON Filmfor Organic Device Encapsulation

International Symposium on Microelectronics, 2016-10, Vol.2016 (1), p.272-276

2016

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SiO2 Film Formed by Inductivity Coupled Plasma Chemical Vapor Deposition at Low Temperature for Poly-Si TFT

Journal of the Korean Physical Society, 2004, 45(3), , pp.861-864

2004

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The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Integrated ferroelectrics, 2004-01, Vol.65 (1), p.183-192

2004

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Low temperature Si-Si, SiO2-SiO2 covalent bonding structures with thin siloxane layer

International Symposium on Microelectronics, 2013-01, Vol.2013 (1), p.424-428

2013

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Method of LTPS TFT with fin-like structure and its channel self-selective enhanced crystallization

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.3, p.1991-1994 vol.3

2004

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Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Quantitative analysis of nano-defects in thin film encapsulation layer by Cu electrodeposition

Advanced poly-Si TFT with fin-like channels by ELA

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization

Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

The Preparation of a Fatigue-Free Bi 4 Ti 3 O 12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Investigation of the Defect Size and Density in Thin SiON Filmfor Organic Device Encapsulation

SiO2 Film Formed by Inductivity Coupled Plasma Chemical Vapor Deposition at Low Temperature for Poly-Si TFT

The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Low temperature Si-Si, SiO2-SiO2 covalent bonding structures with thin siloxane layer

Method of LTPS TFT with fin-like structure and its channel self-selective enhanced crystallization

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