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Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

Crystal growth & design, 2012-05, Vol.12 (5), p.2552-2556

2012

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The nanorod approach: GaN NanoLEDs for solid state lighting

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2296-2301

2011

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Growth and characterization of mixed polar GaN columns and core-shell LEDs

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.727-731

2015

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Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

Applied physics letters, 2012-07, Vol.101 (3)

2012

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The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Journal of crystal growth, 2013-12, Vol.384, p.61-65

2013

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Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2157-2159

2011

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Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE

Journal of physics. D, Applied physics, 2013-05, Vol.46 (20), p.205101-1-6

2013

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The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H sub(2) and N sub(2) carrier gases

Journal of crystal growth, 2013-12, Vol.384, p.61-65

2013

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GaN BASED 3D CORE-SHELL LEDS

International journal of high speed electronics, 2012-03, Vol.21 (1), p.1250008

2012

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Monolithic InGaAsP optoelectronic devices with silicon electronics

IEEE journal of quantum electronics, 2001-10, Vol.37 (10), p.1246-1252

2001

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Growth of InP Layers on Nanometer-Scale Patterned Si Substrates

Crystal growth & design, 2003-01, Vol.3 (1), p.89-93

2003

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The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III–V compound semiconductors on silicon

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13195-13201

2002

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Laser-action in V-groove-shaped InGaAs-InP single quantum wires

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.522-527

2000

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Dark-current analysis of InGaAs-MSM-photodetectors on silicon substrates

IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1505-1509

1996

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Numerical simulation of a dual-branch laser/amplifier switch based on a thyristor-like structure

IEEE journal of quantum electronics, 1999-10, Vol.35 (10), p.1461-1468

1999

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Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits

Japanese Journal of Applied Physics, 1994-06, Vol.33 (6R), p.3628

1994

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Anisotropic-etching simulation of InP and Si

Sensors and actuators. A. Physical., 1997-10, Vol.63 (2), p.141-146

1997

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Antiphase-domain-free InP on (100) Si

Japanese Journal of Applied Physics, 1992-08, Vol.31 (8A), p.L1126-L1128

1992

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Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

The nanorod approach: GaN NanoLEDs for solid state lighting

Growth and characterization of mixed polar GaN columns and core-shell LEDs

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE

The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H sub(2) and N sub(2) carrier gases

GaN BASED 3D CORE-SHELL LEDS

Monolithic InGaAsP optoelectronic devices with silicon electronics

Growth of InP Layers on Nanometer-Scale Patterned Si Substrates

The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III–V compound semiconductors on silicon

Laser-action in V-groove-shaped InGaAs-InP single quantum wires

Dark-current analysis of InGaAs-MSM-photodetectors on silicon substrates

Numerical simulation of a dual-branch laser/amplifier switch based on a thyristor-like structure

Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits

Anisotropic-etching simulation of InP and Si

Antiphase-domain-free InP on (100) Si

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