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Voltage-margin limiting mechanisms of AlScN-based HEMTs

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

Applied physics letters, 2004-01, Vol.84 (4), p.535-537

2004

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Nature (London), 2000-08, Vol.406 (6798), p.865-868

2000

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Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride

Journal of applied physics, 2003-08, Vol.94 (3), p.1448-1453

2003

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Role of inclined threading dislocations in stress relaxation in mismatched layers

Journal of applied physics, 2005-05, Vol.97 (10), p.103534-103534-10

2005

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Well-width dependence of photoluminescence emission from a -plane GaN/AlGaN multiple quantum wells

Applied physics letters, 2004-01, Vol.84 (4), p.496-498

2004

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Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

Applied physics letters, 2003-07, Vol.83 (4), p.674-676

2003

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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.598-605

2016

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GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

IEEE electron device letters, 2010-07, Vol.31 (7), p.671-673

2010

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Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

IEEE electron device letters, 2004-05, Vol.25 (5), p.247-249

2004

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Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (25)

2010

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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

Microelectronics and reliability, 2014-12, Vol.54 (12), p.2656-2661

2014

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GaN HEMTs and MMICs for space applications

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74010

2013

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Analysis and modeling of GaN-based multi field plate Schottky power diodes

2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 2016, p.1-6

2016

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Growth of M-plane GaN(1 1 0 0) on γ-LiAlO2(1 0 0)

Journal of crystal growth, 2000-09, Vol.218 (2-4), p.143-147

2000

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Buried stressors in nitride semiconductors: Influence on electronic properties

Journal of applied physics, 2005-02, Vol.97 (4)

2005

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In-plane polarization anisotropy of the spontaneous emission of M -plane GaN/(Al,Ga)N quantum wells

Applied physics letters, 2000-11, Vol.77 (21), p.3343-3345

2000

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Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

Microelectronics and reliability, 2011-02, Vol.51 (2), p.224-228

2011

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Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

Applied physics letters, 1999-06, Vol.74 (24), p.3660-3662

1999

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Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

Applied physics letters, 1999-12, Vol.75 (25), p.4019-4021

1999

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Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

Applied physics letters, 2003-02, Vol.82 (8), p.1293-1295

2003

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Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content

Physica status solidi. A, Applications and materials science, 2009-11, Vol.206 (11), p.2652-2657

2009

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Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

Journal of applied physics, 2003-12, Vol.94 (12), p.7611-7615

2003

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Voltage-margin limiting mechanisms of AlScN-based HEMTs

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride

Role of inclined threading dislocations in stress relaxation in mismatched layers

Well-width dependence of photoluminescence emission from a -plane GaN/AlGaN multiple quantum wells

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

GaN HEMTs and MMICs for space applications

Analysis and modeling of GaN-based multi field plate Schottky power diodes

Growth of M-plane GaN(1 1 0 0) on γ-LiAlO2(1 0 0)

Buried stressors in nitride semiconductors: Influence on electronic properties

In-plane polarization anisotropy of the spontaneous emission of M -plane GaN/(Al,Ga)N quantum wells

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications

Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content

Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy

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