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Schottky barrier height of metal contacts to p -type alpha 6H-SiC

Journal of applied physics, 1994-05, Vol.75 (9), p.4548-4550

Waldrop, J. R.

1994

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Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC : crystal face dependence

Applied physics letters, 1993-05, Vol.62 (21), p.2685-2687

1993

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Metal Schottky barrier contacts to alpha 6H:SiC

Journal of applied physics, 1992-11, Vol.72 (10), p.4757-4760

1992

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Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

Applied physics letters, 1996-05, Vol.68 (20), p.2879-2881

1996

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Schottky-barrier height of ideal metal contacts to GaAs

Applied physics letters, 1984-05, Vol.44 (10), p.1002-1004

WALDROP, J. R

1984

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Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Physical review letters, 1980-06, Vol.44 (24), p.1620-1623

1980

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Formation and Schottky barrier height of metal contacts to β-SiC

Applied physics letters, 1990-02, Vol.56 (6), p.557-559

1990

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Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te

Applied physics letters, 1985-01, Vol.47 (12), p.1301-1303

WALDROP, J. R

1985

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Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current

IEEE electron device letters, 1995-01, Vol.16 (1), p.8-10

1995

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Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy

Applied physics letters, 1989-05, Vol.54 (19), p.1878-1880

1989

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Interface chemistry of metal-GaAs Schottky-barrier contacts

Applied physics letters, 1979-05, Vol.34 (10), p.630-632

1979

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Interface chemistry and electrical properties of tungsten Schottky-barrier contacts to GaAs

Applied physics letters, 1982-08, Vol.41 (4), p.350-352

Waldrop, J. R.

1982

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Thermal grooving at the interface between alumina and monazite

Acta materialia, 2000-12, Vol.48 (18-19), p.4471-4474

2000

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Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs

Applied physics letters, 1987-02, Vol.50 (5), p.250-252

1987

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Improved thermal performance of AlGaAs/GaAs HBTS by transferring the epitaxial layers to high-thermal-conductivity substrates

Electronics letters, 1993, Vol.29 (21), p.1890-1891

1993

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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement

IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1248-1250

1992

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Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

Journal of applied physics, 1991-01, Vol.69 (1), p.372-378

1991

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Electrical properties of ideal metal contacts to GaAs: Schottky‐barrier height

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1984-07, Vol.2 (3), p.445-448

Waldrop, J. R.

1984

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Metal contacts to p-type GaAs with large Schottky barrier heights

Applied physics letters, 1988-10, Vol.53 (16), p.1518-1520

WALDROP, J. R

1988

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Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopy

Physical review. B, Condensed matter, 1983-01, Vol.28 (4), p.1965-1977

1983

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Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

Physical review letters, 1978-03, Vol.40 (10), p.656-659

1978

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Rare-earth metal Schottky-barrier contacts to GaAs

Applied physics letters, 1985-01, Vol.46 (9), p.864-866

WALDROP, J. R

1985

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Metal contacts to GaAs with 1 eV Schottky barrier height

Applied physics letters, 1988-05, Vol.52 (21), p.1794-1796

1988

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Titanium nitride Schottky-barrier contacts to GaAs

Applied physics letters, 1983-07, Vol.43 (1), p.87-89

Waldrop, J. R.

1983

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The mechanism of Schottky-barrier formation in polyacetylene

Applied physics letters, 1981-01, Vol.38 (1), p.53-55

1981

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Schottky barrier height of metal contacts to p -type alpha 6H-SiC

Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC : crystal face dependence

Metal Schottky barrier contacts to alpha 6H:SiC

Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

Schottky-barrier height of ideal metal contacts to GaAs

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Formation and Schottky barrier height of metal contacts to β-SiC

Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te

Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current

Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy

Interface chemistry of metal-GaAs Schottky-barrier contacts

Interface chemistry and electrical properties of tungsten Schottky-barrier contacts to GaAs

Thermal grooving at the interface between alumina and monazite

Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs

Improved thermal performance of AlGaAs/GaAs HBTS by transferring the epitaxial layers to high-thermal-conductivity substrates

Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement

Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

Electrical properties of ideal metal contacts to GaAs: Schottky‐barrier height

Metal contacts to p-type GaAs with large Schottky barrier heights

Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopy

Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

Rare-earth metal Schottky-barrier contacts to GaAs

Metal contacts to GaAs with 1 eV Schottky barrier height

Titanium nitride Schottky-barrier contacts to GaAs

The mechanism of Schottky-barrier formation in polyacetylene

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