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Silicon carbide and diamond for high temperature device applications

Journal of materials science. Materials in electronics, 2006-01, Vol.17 (1), p.1-25

2006

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High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Applied physics letters, 2000-10, Vol.77 (14), p.2186-2188

2000

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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Ionization rates and critical fields in 4H silicon carbide

Applied physics letters, 1997-07, Vol.71 (1), p.90-92

1997

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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

Journal of luminescence, 2010-06, Vol.130 (6), p.963-968

2010

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Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

IOP conference series. Materials Science and Engineering, 2012-01, Vol.34 (1), p.12006-7

2012

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Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Applied physics letters, 2000-05, Vol.76 (19), p.2725-2727

2000

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Figure of merit for narrowband, wideband and multiband LNAs

International journal of electronics, 2012-11, Vol.99 (11), p.1603-1610

2012

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Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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Interface state density of free-standing GaN Schottky diodes

Semiconductor science and technology, 2010-09, Vol.25 (9), p.095008-095008

2010

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Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers

Applied physics letters, 2005-12, Vol.87 (24)

2005

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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3041-3043

2012

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Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3038-3040

2012

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Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes

Semiconductor science and technology, 2007-12, Vol.22 (12), p.1287-1291

2007

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Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD

Solid-state electronics, 2008-05, Vol.52 (5), p.740-744

2008

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Growth of 6H and 4H–SiC by sublimation epitaxy

Journal of crystal growth, 1999-02, Vol.197 (1), p.155-162

1999

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Study of avalanche breakdown and impact ionization in 4H silicon carbide

Journal of electronic materials, 1998-04, Vol.27 (4), p.335-341

1998

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A 3 kV Schottky barrier diode in 4H-SiC

Applied physics letters, 1998-01, Vol.72 (4), p.445-447

1998

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Voltage- and Frequency-Dependent Electrical Characteristics and Interface State Density of Ni/ZnO Schottky Diodes

Acta physica Polonica, A, 2022-02, Vol.141 (2), p.99-104

2022

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Influence of interface state charges on RF performance of LDMOS transistor

Solid-state electronics, 2008-07, Vol.52 (7), p.1099-1105

2008

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Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

Open Physics, 2021-08, Vol.19 (1), p.467-476

2021

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Wideband and multiband CMOS LNAs: State-of-the-art and future prospects

Microelectronics, 2013-09, Vol.44 (9), p.774-786

2013

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Synthesis and structural and optical properties of ZnO micro- and nanostructures grown by the vapour–liquid–solid method

Physica scripta, 2006, Vol.2006, p.53-56

2006

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High temperature CVD growth of SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.113-120

1999

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Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Applied physics letters, 1998-09, Vol.73 (13), p.1850-1852

1998

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Silicon carbide and diamond for high temperature device applications

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Ionization rates and critical fields in 4H silicon carbide

Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Figure of merit for narrowband, wideband and multiband LNAs

Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

Interface state density of free-standing GaN Schottky diodes

Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers

Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes

Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD

Growth of 6H and 4H–SiC by sublimation epitaxy

Study of avalanche breakdown and impact ionization in 4H silicon carbide

A 3 kV Schottky barrier diode in 4H-SiC

Voltage- and Frequency-Dependent Electrical Characteristics and Interface State Density of Ni/ZnO Schottky Diodes

Influence of interface state charges on RF performance of LDMOS transistor

Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

Wideband and multiband CMOS LNAs: State-of-the-art and future prospects

Synthesis and structural and optical properties of ZnO micro- and nanostructures grown by the vapour–liquid–solid method

High temperature CVD growth of SiC

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

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