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MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

Applied physics letters, 2018-09, Vol.113 (13)

2018

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Group‐III Sesquioxides: Growth, Physical Properties and Devices

Advanced electronic materials, 2017-09, Vol.3 (9), p.n/a

von Wenckstern, Holger

2017

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Lattice parameters and Raman-active phonon modes of (In x Ga1– x )2O3 for x < 0.4

Journal of applied physics, 2014-07, Vol.116 (1)

2014

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Ultrawide bandgap willemite-type Zn2GeO4 epitaxial thin films

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Impact of strain on electronic defects in (Mg,Zn)O thin films

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Method of choice for fabrication of high-quality ZnO-based Schottky diodes

Journal of applied physics, 2014-11, Vol.116 (19)

2014

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Highly crystalline In2S3 thin films epitaxially grown on sapphire substrates

AIP advances, 2022-12, Vol.12 (12), p.125215-125215-9

2022

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Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Applied physics letters, 2016-06, Vol.108 (24)

2016

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Transparent p -CuI/ n -ZnO heterojunction diodes

Applied physics letters, 2013-03, Vol.102 (9)

2013

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SnO/β-Ga2O3 vertical pn heterojunction diodes

Applied physics letters, 2020-12, Vol.117 (25)

2020

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Optical signatures of deep level defects in Ga2O3

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Numerical Modeling of Schottky Barrier Diode Characteristics

Physica status solidi. A, Applications and materials science, 2021-06, Vol.218 (12), p.n/a

2021

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Visible-blind and solar-blind ultraviolet photodiodes based on (In x Ga1− x )2O3

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Electrical Properties of Vertical p‐NiO/n‐Ga2O3 and p‐ZnCo2O4/n‐Ga2O3 pn‐Heterodiodes

Physica status solidi. A, Applications and materials science, 2019-04, Vol.216 (7), p.n/a

2019

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Realization of Conductive n‐Type Doped α‐Ga2O3 on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Physica status solidi. A, Applications and materials science, 2023-02, Vol.220 (3), p.n/a

2023

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Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1671-1703

2013

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p‐Type Doping and Alloying of CuI Thin Films with Selenium

Physica status solidi. PSS-RRL. Rapid research letters, 2021-08, Vol.15 (8), p.n/a

2021

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A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition

physica status solidi (b), 2020-07, Vol.257 (7), p.n/a

2020

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Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Journal of applied physics, 2024-07, Vol.136 (1)

2024

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Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films

Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10), p.n/a

2017

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Epitaxial lift-off of single crystalline CuI thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-03, Vol.1 (11), p.4124-4127

2022

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Nickel Oxide–Based Heterostructures with Large Band Offsets

physica status solidi (b), 2020-07, Vol.257 (7), p.n/a

2020

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Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

ACS applied materials & interfaces, 2021-01, Vol.13 (2), p.2807-2819

2021

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Grain and Grain Boundary Conduction Channels in Copper Iodide Thin Films

Physica status solidi. A, Applications and materials science, 2023-03, Vol.220 (6), p.n/a

2023

Volltextzugriff (PDF)

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MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

Group‐III Sesquioxides: Growth, Physical Properties and Devices

Lattice parameters and Raman-active phonon modes of (In x Ga1– x )2O3 for x < 0.4

Ultrawide bandgap willemite-type Zn2GeO4 epitaxial thin films

Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes

Impact of strain on electronic defects in (Mg,Zn)O thin films

Method of choice for fabrication of high-quality ZnO-based Schottky diodes

Highly crystalline In2S3 thin films epitaxially grown on sapphire substrates

Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Transparent p -CuI/ n -ZnO heterojunction diodes

SnO/β-Ga2O3 vertical pn heterojunction diodes

Optical signatures of deep level defects in Ga2O3

Numerical Modeling of Schottky Barrier Diode Characteristics

Visible-blind and solar-blind ultraviolet photodiodes based on (In x Ga1− x )2O3

Electrical Properties of Vertical p‐NiO/n‐Ga2O3 and p‐ZnCo2O4/n‐Ga2O3 pn‐Heterodiodes

Realization of Conductive n‐Type Doped α‐Ga2O3 on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

p‐Type Doping and Alloying of CuI Thin Films with Selenium

A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition

Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films

Epitaxial lift-off of single crystalline CuI thin films

Nickel Oxide–Based Heterostructures with Large Band Offsets

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Grain and Grain Boundary Conduction Channels in Copper Iodide Thin Films

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