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Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

Journal of physics. D, Applied physics, 2003-12, Vol.36 (23), p.2869-2877

2003

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Radio frequency (10–23 MHz)-assisted excitation of a microdischarge with a piezoelectric transformer

Plasma sources science & technology, 2004-05, Vol.13 (2), p.278-281

2004

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Motivating Technical Visionaries in Large American Companies

IEEE transactions on engineering management, 2007-08, Vol.54 (3), p.433-444

2007

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Product attribute bullwhip in the technology planning process and a methodology to reduce it

IEEE transactions on engineering management, 2004-08, Vol.51 (3), p.288-299

2004

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Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm

Applied physics letters, 2001-03, Vol.78 (10), p.1340-1342

2001

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Large room-temperature effects from resonant tunneling through AlAs barriers

Applied physics letters, 1986-10, Vol.49 (17), p.1086-1088

1986

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Ceramic microdischarge arrays with individually ballasted pixels

Applied physics letters, 2003-04, Vol.82 (16), p.2562-2564

2003

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Gain-loss model for the dependence of the stimulated-emission transition in AlGaAs-GaAs quantum well heterostructures on photoexcitation geometry

Applied physics letters, 1989-06, Vol.54 (25), p.2518-2520

1989

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Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Applied physics letters, 1982-08, Vol.41 (4), p.347-349

1982

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Broad-area semiconductor lasers with gain-length variation for lateral mode control: the bow-tie geometry laser

Journal of applied physics, 1988, Vol.63 (1), p.248-250

1988

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High-energy (Visible-red) stimulated emission in GaAs

Journal of applied physics, 1981-02, Vol.52 (2), p.621-626

1981

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Structural characterization by transmission electron microscopy of silicon grown over submicrometer-period gratings of deposited tungsten

Applied physics letters, 1984-01, Vol.44 (2), p.223-225

1984

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Roadmapping disruptive technical threats and opportunities in complex, technology-based subsystems: The SAILS methodology

Technological forecasting & social change, 2004, Vol.71 (1), p.121-139

2004

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Photopumped laser operation of GaAs doping superlattices

Applied physics letters, 1986-01, Vol.48 (3), p.251-253

1986

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The effect of base-Schottky geometry on Si PBT device performance

IEEE electron device letters, 1984-06, Vol.5 (6), p.191-193

1984

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A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

IEEE transactions on electron devices, 1983-08, Vol.30 (8), p.877-883

1983

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Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of Xe

Applied physics letters, 2003-06, Vol.82 (25), p.4447-4449

2003

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Temperature dependence of threshold current for a quantum-well heterostructure laser

Solid-state electronics, 1980-01, Vol.23 (6), p.585-589

1980

Volltextzugriff (PDF)

A self-aligned dual-grating GaAs permeable base transistor

IEEE electron device letters, 1984-07, Vol.5 (7), p.270-272

1984

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Transient and noise characteristics of quantum-well heterostructure lasers

Applied physics letters, 1981-04, Vol.38 (8), p.585-587

1981

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Phonon-Assisted Recombination and Stimulated Emission in Quantum-Well AlxGa1--xAs--GaAs Heterostructures

Journal of applied physics, 1980-03, Vol.51 (3), p.1328-1337

1980

Volltextzugriff (PDF)

The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures

Solid state communications, 1980-08, Vol.35 (6), p.477-481

1980

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Stimulated emission in a degenerately doped GaAs quantum well

Applied physics letters, 1982-04, Vol.40 (8), p.658-660

1982

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Phonon contribution to double-heterojunction laser operation

Applied physics letters, 1980-07, Vol.37 (2), p.136-138

1980

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Characteristics of technical visionaries as perceived by American and British industrial physicists

R & D management, 2006-01, Vol.36 (1), p.17-26

2006

Volltextzugriff (PDF)

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Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

Radio frequency (10–23 MHz)-assisted excitation of a microdischarge with a piezoelectric transformer

Motivating Technical Visionaries in Large American Companies

Product attribute bullwhip in the technology planning process and a methodology to reduce it

Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm

Large room-temperature effects from resonant tunneling through AlAs barriers

Ceramic microdischarge arrays with individually ballasted pixels

Gain-loss model for the dependence of the stimulated-emission transition in AlGaAs-GaAs quantum well heterostructures on photoexcitation geometry

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Broad-area semiconductor lasers with gain-length variation for lateral mode control: the bow-tie geometry laser

High-energy (Visible-red) stimulated emission in GaAs

Structural characterization by transmission electron microscopy of silicon grown over submicrometer-period gratings of deposited tungsten

Roadmapping disruptive technical threats and opportunities in complex, technology-based subsystems: The SAILS methodology

Photopumped laser operation of GaAs doping superlattices

The effect of base-Schottky geometry on Si PBT device performance

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of Xe

Temperature dependence of threshold current for a quantum-well heterostructure laser

A self-aligned dual-grating GaAs permeable base transistor

Transient and noise characteristics of quantum-well heterostructure lasers

Phonon-Assisted Recombination and Stimulated Emission in Quantum-Well AlxGa1--xAs--GaAs Heterostructures

The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures

Stimulated emission in a degenerately doped GaAs quantum well

Phonon contribution to double-heterojunction laser operation

Characteristics of technical visionaries as perceived by American and British industrial physicists

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