UB Paderborn / Katalog / Suche / in CDI

Randomized phase II study of axitinib versus physicians best alternative choice of therapy in patients with recurrent glioblastoma

Journal of neuro-oncology, 2016-05, Vol.128 (1), p.147-155

2016

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Medication-overuse headache: a widely recognized entity amidst ongoing debate

Journal of headache and pain, 2018-07, Vol.19 (1), p.50-14, Article 50

2018

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Richard Strauss à Bruxelles (1896-1900)

Revue belge de musicologie, 1990-01, Vol.44, p.159-172

Vandervorst, Françoise

1990

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Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications

ACS applied materials & interfaces, 2018-12, Vol.10 (49), p.43236-43251

2018

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Applied physics letters, 2011-10, Vol.99 (15), p.152103-152103-3

2011

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X-ray absorption in pillar shaped transmission electron microscopy specimens

Ultramicroscopy, 2017-06, Vol.177, p.58-68

2017

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Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts

Ultramicroscopy, 2017-08, Vol.179, p.100-107

2017

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Laser pulsing of field evaporation in atom probe tomography

Current opinion in solid state & materials science, 2014-04, Vol.18 (2), p.81-89

2014

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Post-ion beam induced degradation of copper layers in transmission electron microscopy specimens

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114016

2015

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Electrical characterization of single nanometer-wide Si fins in dense arrays

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.1863-1867

2018

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On periodic orbits in cotangent bundles of non-compact manifolds

Journal of symplectic geometry, 2016, Vol.14 (4), p.1145-1173

2016

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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Applied physics letters, 2004-03, Vol.84 (12), p.2055-2057

2004

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Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts

Ultramicroscopy, 2017-08, Vol.179, p.100-107

2017

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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Thin solid films, 2015-09, Vol.590, p.163-169

2015

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Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Thin solid films, 2012-02, Vol.520 (8), p.3206-3210

2012

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Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

Scripta materialia, 2018-04, Vol.148, p.91-97

2018

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Electrical Contact Formation in Micro Four‐Point Probe Measurements

Physica status solidi. A, Applications and materials science, 2020-03, Vol.217 (5), p.n/a

2020

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Identification and description of the axillary web syndrome (AWS) by clinical signs, MRI and US imaging

Lymphology, 2014-12, Vol.47 (4), p.164-176

2014

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High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge

Thin solid films, 2008-11, Vol.517 (1), p.23-26

2008

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Dopant/carrier profiling for 3D-structures

Physica status solidi. C, 2014-01, Vol.11 (1), p.121-129

2014

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Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO2

Physical review letters, 2015-11, Vol.115 (19)

2015

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An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

Physica status solidi. A, Applications and materials science, 2018-03, Vol.215 (6), p.n/a

2018

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Randomized phase II study of axitinib versus physicians best alternative choice of therapy in patients with recurrent glioblastoma

Medication-overuse headache: a widely recognized entity amidst ongoing debate

Richard Strauss à Bruxelles (1896-1900)

Laser-Induced Periodic Surface Structures (LIPSS) on Heavily Boron-Doped Diamond for Electrode Applications

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

X-ray absorption in pillar shaped transmission electron microscopy specimens

Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts

Laser pulsing of field evaporation in atom probe tomography

Post-ion beam induced degradation of copper layers in transmission electron microscopy specimens

Electrical characterization of single nanometer-wide Si fins in dense arrays

On periodic orbits in cotangent bundles of non-compact manifolds

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Atom probe tomography analysis of SiGe fins embedded in SiO 2 : Facts and artefacts

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

Electrical Contact Formation in Micro Four‐Point Probe Measurements

Identification and description of the axillary web syndrome (AWS) by clinical signs, MRI and US imaging

High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge

Dopant/carrier profiling for 3D-structures

Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO2

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

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