UB Paderborn / Katalog / Suche / in CDI

Characterization of ageing failures on power MOSFET devices by electron and ion microscopies

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1330-1333

2009

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Characterization and modelling of ageing failures on power MOSFET devices

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1735-1740

2007

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Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.939-943

2005

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TEM in situ study of degradation mechanisms induced by temperature annealing and electron beam irradiation in a ZnSe/GaAs heterostructure

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-03, Vol.128 (1), p.1-6

2006

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Transmission electron microscopy in situ investigation of dislocation behaviour in semiconductors and the influence of electronic excitation

Philosophical magazine (Abingdon, England), 2006-10, Vol.86 (29-31), p.4923-4940

2006

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Dislocation mobility and electronic effects in semiconductor compounds

Journal of microscopy (Oxford), 2001-07, Vol.203 (1), p.72-83

2001

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Alterations induced in the structure of intelligent power devices by extreme electro-thermal fatigue

Physica status solidi. C, 2007-07, Vol.4 (8), p.2997-3001

2007

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Sources of misfit dislocations in ZnSe/GaAs (001) heterostructures

Physica status solidi. C, 2007-07, Vol.4 (8), p.3015-3019

2007

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misfit dislocations in ZnSe/GaAs(001) heterostructure

Journal of physics. Condensed matter (Print), 2002, Vol.14 (48), p.13291-13298

2002

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Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2002-11, Vol.337 (1), p.50-58

2002

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Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10093-10103

2000

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Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1717-1722

2005

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Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.12975-12979

2002

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Transmission electron microscopy study of dislocations and extended defects in as-grown icosahedral Al-Pd-Mn single grains

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2000-01, Vol.80 (1), p.237-253

2000

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Photoplastic effect and Vickers microhardness in III–V and II–VI semiconductor compounds

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1997-08, Vol.234, p.865-868

1997

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A TEM study of slip lines in power MOS devices

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10279-10286

2000

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Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

Physica status solidi. A, Applied research, 1999-01, Vol.171 (1), p.83-88

1999

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On the equilibrium configurations of climb-dissociated Lomer-Cottrell dislocations

Philosophical magazine letters, 1998-08, Vol.78 (2), p.87-95

1998

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Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10287-10293

2000

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Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure

Acta materialia, 1996-08, Vol.44 (8), p.3279-3291

1996

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Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2000-01, Vol.80 (1), p.83-104

2000

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Photoplastic effect and vickers microhardness in ZnS sphalerite

Scripta materialia, 1996-03, Vol.34 (6), p.869-875

1996

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Protoplastic effect and vickers microhardness in ZnS sphalerite

Scripta materialia, 1996-03, Vol.34 (6), p.869-875

1996

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Determination of the fault energies in L12 alloys

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1987-12, Vol.56 (6), p.689-701

Vanderschaeve, G.

1987

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310 misfit dislocations in ZnSe/GaAs(001) heterostructure

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13291-13298

2002

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Characterization of ageing failures on power MOSFET devices by electron and ion microscopies

Characterization and modelling of ageing failures on power MOSFET devices

Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors

TEM in situ study of degradation mechanisms induced by temperature annealing and electron beam irradiation in a ZnSe/GaAs heterostructure

Transmission electron microscopy in situ investigation of dislocation behaviour in semiconductors and the influence of electronic excitation

Dislocation mobility and electronic effects in semiconductor compounds

Alterations induced in the structure of intelligent power devices by extreme electro-thermal fatigue

Sources of misfit dislocations in ZnSe/GaAs (001) heterostructures

misfit dislocations in ZnSe/GaAs(001) heterostructure

Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests

Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors

Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue

Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide

Transmission electron microscopy study of dislocations and extended defects in as-grown icosahedral Al-Pd-Mn single grains

Photoplastic effect and Vickers microhardness in III–V and II–VI semiconductor compounds

A TEM study of slip lines in power MOS devices

Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

On the equilibrium configurations of climb-dissociated Lomer-Cottrell dislocations

Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers

Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure

Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness

Photoplastic effect and vickers microhardness in ZnS sphalerite

Protoplastic effect and vickers microhardness in ZnS sphalerite

Determination of the fault energies in L12 alloys

310 misfit dislocations in ZnSe/GaAs(001) heterostructure

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