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Propionatbildung bei Rhodospirillum rubrum, unter anaeroben Bedingungen / Propionate formation in Rhodospirillum rubrum under anaerobic dark conditions

1981, 2022, Vol.21, Heft 7, p.545-554

2022

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Bakterienkulturen zum Abbau substituierter Aromaten

Vom Wasser, 1984, Vol.63, p.87-92

VOELSKOW, H

1984

Volltextzugriff (PDF)

Abwasserprüfung auf Gentoxizität

Vom Wasser, 1994, Vol.83, p.227-234

VOELSKOW, H

1994

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Pyruvate fermentation in light-grown cells of Rhodospirillum rubrum during adaptation to anaerobic dark conditions

Archives of microbiology, 1978-11, Vol.119 (2), p.129-133

1978

Volltextzugriff (PDF)

Propionate formation in Rhodospirillum rubrum under anaerobic dark conditions

Zeitschrift fur allgemeine Mikrobiologie, 1981, Vol.21 (7), p.545-553

1981

Volltextzugriff (PDF)

Production of L-phenylalanine from phenylpyruvate using resting cells of Escherichia coli

Biotechnology letters, 1987-10, Vol.9 (10), p.680-684

1987

Volltextzugriff (PDF)

Propionate formation inRhodospirillum rubrum under anaerobic dark conditions

Zeitschrift für allgemeine Mikrobiologie, 1981, Vol.21 (7), p.545-553

1981

Volltextzugriff (PDF)

Pyruvate fermentation in light-brown cells of Rhodospirillum rubrum during adaptation to anaerobic dark condition

Archives of microbiology, 1978, Vol.119

1978

Volltextzugriff (PDF)

Pyruvate fermentation in light-grown cells ofRhodospirillum rubrum during adaptation to anaerobic dark conditions

Archives of microbiology, 1978-11, Vol.119 (2), p.129-133

1978

Volltextzugriff (PDF)

H2 production of Rhodospirillum rubrum during adaptation to anaerobic dark conditions

Archives of microbiology, 1980-04, Vol.125 (3), p.245-249

1980

Volltextzugriff (PDF)

Pyruvate fermentation in Rhodospirillum rubrum and after transfer from aerobic to anaerobic conditions in the dark

Archives of microbiology, 1976-02, Vol.107 (1), p.87-92

1976

Volltextzugriff (PDF)

H2 production of Rhodospirillum rubrum during adaption to anaerobic dark conditions [enzymes, salt, minerals, ash]

Archives of microbiology, 1980, Vol.125 (3)

1980

Volltextzugriff (PDF)

Superconducting state in a gallium-doped germanium layer at low temperatures

Physical review letters, 2009-05, Vol.102 (21), p.217003-217003, Article 217003

2009

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Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Journal of applied physics, 2010-03, Vol.107 (5)

2010

Volltextzugriff (PDF)

Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation

Journal of crystal growth, 2014-02, Vol.388, p.70-75

2014

Volltextzugriff (PDF)

Superconductivity in thin-film germanium in the temperature regime around 1 K

Superconductor science & technology, 2010-03, Vol.23 (3), p.034007-034007

2010

Volltextzugriff (PDF)

Density and structural changes in SiC after amorphization and annealing

Applied physics letters, 1997-06, Vol.70 (26), p.3531-3533

1997

Volltextzugriff (PDF)

The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing

Physica status solidi. C, 2011-03, Vol.8 (3), p.960-963

2011

Volltextzugriff (PDF)

SIMS investigation of Ge(x)(4H-SiC)(1-x) solid solutions synthesized by Ge-ion implantation up to x=0.2

Materials science forum, 2009-01, Vol.615-617, p.465-468

2009

Volltextzugriff (PDF)

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

Acta physica Polonica, A, 2013-05, Vol.123 (5), p.916-919

2013

Volltextzugriff (PDF)

Heavily Ga-doped germanium layers produced by ion implantationand flash lamp annealing: Structure and electrical activation

Journal of applied physics, 2010-03, Vol.107 (5), p.053508-053508-8

2010

Volltextzugriff (PDF)

Structure and Lattice Location of Ge Implanted 4H-SiC

Materials science forum, 2009, Vol.600-603, p.623-626

2009

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Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

Materials science forum, 2009, Vol.600-603, p.239-242

2009

Volltextzugriff (PDF)

SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Materials science forum, 2009-03, Vol.615-617, p.465-468

2009

Volltextzugriff (PDF)

Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

Applied physics. A, Materials science & processing, 2000-08, Vol.71 (2), p.175-180

2000

Volltextzugriff (PDF)

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Propionatbildung bei Rhodospirillum rubrum, unter anaeroben Bedingungen / Propionate formation in Rhodospirillum rubrum under anaerobic dark conditions

Bakterienkulturen zum Abbau substituierter Aromaten

Abwasserprüfung auf Gentoxizität

Pyruvate fermentation in light-grown cells of Rhodospirillum rubrum during adaptation to anaerobic dark conditions

Propionate formation in Rhodospirillum rubrum under anaerobic dark conditions

Production of L-phenylalanine from phenylpyruvate using resting cells of Escherichia coli

Propionate formation inRhodospirillum rubrum under anaerobic dark conditions

Pyruvate fermentation in light-brown cells of Rhodospirillum rubrum during adaptation to anaerobic dark condition

Pyruvate fermentation in light-grown cells ofRhodospirillum rubrum during adaptation to anaerobic dark conditions

H2 production of Rhodospirillum rubrum during adaptation to anaerobic dark conditions

Pyruvate fermentation in Rhodospirillum rubrum and after transfer from aerobic to anaerobic conditions in the dark

H2 production of Rhodospirillum rubrum during adaption to anaerobic dark conditions [enzymes, salt, minerals, ash]

Superconducting state in a gallium-doped germanium layer at low temperatures

Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation

Superconductivity in thin-film germanium in the temperature regime around 1 K

Density and structural changes in SiC after amorphization and annealing

The formation of near surface SiGe layers with combined high-dose ion implantation and flash-lamp annealing

SIMS investigation of Ge(x)(4H-SiC)(1-x) solid solutions synthesized by Ge-ion implantation up to x=0.2

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

Heavily Ga-doped germanium layers produced by ion implantationand flash lamp annealing: Structure and electrical activation

Structure and Lattice Location of Ge Implanted 4H-SiC

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

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