UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 972

Sortiert nach

Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots

ACS applied materials & interfaces, 2014-05, Vol.6 (9), p.6191-6195

2014

Volltextzugriff (PDF)

General route for the decomposition of InAs quantum dots during the capping process

Nanotechnology, 2016-03, Vol.27 (12), p.125703-125703

2016

Volltextzugriff (PDF)

Photoexcited-induced sensitivity of InGaAs surface QDs to environment

Nanotechnology, 2014-11, Vol.25 (44), p.445501-6

2014

Volltextzugriff (PDF)

Strain-balanced type-II superlattices for efficient multi-junction solar cells

Scientific reports, 2017-06, Vol.7 (1), p.4012-10, Article 4012

2017

Volltextzugriff (PDF)

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Nanoscale research letters, 2017-05, Vol.12 (1), p.356-356, Article 356

2017

Volltextzugriff (PDF)

VIS-UV ZnCdO ZnO multiple quantum well nanowires and the quantification of Cd diffusion

Nanotechnology, 2014-06, Vol.25 (25), p.255202-6

2014

Volltextzugriff (PDF)

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

Applied physics letters, 2018-05, Vol.112 (21)

2018

Volltextzugriff (PDF)

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Semiconductor science and technology, 2011-06, Vol.26 (6), p.064007

2011

Volltextzugriff (PDF)

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Applied physics letters, 2013-04, Vol.102 (14)

2013

Volltextzugriff (PDF)

Strain mapping accuracy improvement using super‐resolution techniques

Journal of microscopy (Oxford), 2016-04, Vol.262 (1), p.50-58

2016

Volltextzugriff (PDF)

Not-from-concentrate pilot plant ‘Wonderful’ cultivar pomegranate juice changes: Quality

Food chemistry, 2020-07, Vol.318, p.126453-126453, Article 126453

2020

Volltextzugriff (PDF)

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Applied physics letters, 2007-04, Vol.101 (8), p.081707-081707-6

2007

Volltextzugriff (PDF)

1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing

Solar energy, 2021-06, Vol.221, p.307-313

2021

Volltextzugriff (PDF)

Physicochemical properties and aroma volatile profiles in a diverse collection of California-grown pomegranate (Punica granatum L.) germplasm

Food chemistry, 2015-08, Vol.181, p.354-364

2015

Volltextzugriff (PDF)

InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Applied physics letters, 2014-02, Vol.104 (5)

2014

Volltextzugriff (PDF)

Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2007-08, Vol.91 (7)

2007

Volltextzugriff (PDF)

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

Nanotechnology, 2017-10, Vol.28 (42), p.425702-425702

2017

Volltextzugriff (PDF)

Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

Solar energy materials and solar cells, 2020-06, Vol.210, p.110500, Article 110500

2020

Volltextzugriff (PDF)

High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

Applied physics letters, 2012-03, Vol.100 (13), p.131601-131601-3

2012

Volltextzugriff (PDF)

Analysis of the modified optical properties and band structure of GaAs1−xSbx-capped InAs/GaAs quantum dots

Journal of applied physics, 2012-10, Vol.112 (7)

2012

Volltextzugriff (PDF)

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

Journal of applied physics, 2003-08, Vol.94 (4), p.2319-2324

2003

Volltextzugriff (PDF)

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Applied physics letters, 2015-07, Vol.107 (1)

2015

Volltextzugriff (PDF)

Growth and in situ annealing conditions for long-wavelength(Ga, In)(N, As)/GaAs lasers

Applied physics letters, 2005-02, Vol.86 (7), p.071105-071105-3

2005

Volltextzugriff (PDF)

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Applied physics letters, 2012-12, Vol.101 (25)

2012

Volltextzugriff (PDF)

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Applied physics letters, 2010-03, Vol.96 (10)

2010

Volltextzugriff (PDF)

1 – 25 von 972

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(839)
Mit Volltextzugriff
(837)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

3 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(584)
Life Sciences & Biomedicine
(352)
Humans
(230)
Physical Sciences
(174)
Physics
(133)
Female
(130)
Male
(126)
Technology
(120)
Animals
(103)
Biological And Medical Sciences
(97)
Physics, Applied
(89)
Materials Science
(73)
Science & Technology - Other Topics
(70)
Adult
(57)
Materials Science, Multidisciplinary
(55)
Medical Sciences
(55)
Middle Aged
(48)
Engineering
(47)
Fundamental And Applied Biological Sciences. Psychology
(47)
Physics, Condensed Matter
(40)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots

General route for the decomposition of InAs quantum dots during the capping process

Photoexcited-induced sensitivity of InGaAs surface QDs to environment

Strain-balanced type-II superlattices for efficient multi-junction solar cells

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

VIS-UV ZnCdO ZnO multiple quantum well nanowires and the quantification of Cd diffusion

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Strain mapping accuracy improvement using super‐resolution techniques

Not-from-concentrate pilot plant ‘Wonderful’ cultivar pomegranate juice changes: Quality

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing

Physicochemical properties and aroma volatile profiles in a diverse collection of California-grown pomegranate (Punica granatum L.) germplasm

InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

Analysis of the modified optical properties and band structure of GaAs1−xSbx-capped InAs/GaAs quantum dots

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Growth and in situ annealing conditions for long-wavelength(Ga, In)(N, As)/GaAs lasers

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Suchergebnisse filtern