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Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition

Journal of crystal growth, 2012-05, Vol.347 (1), p.45-48

2012

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CVD Growth of 3C-SiC on 4H/6H Mesas

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.531-540

2006

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Journal of electronic materials, 2010-06, Vol.39 (6), p.743-746

2010

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Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6139-6149

2007

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Applied physics letters, 2007-06, Vol.90 (23)

2007

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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Applied physics letters, 2007-08, Vol.91 (9), p.094106-094106-3

2007

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Materials science forum, 2004-06, Vol.457-460, p.169-174

2004

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Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias

Materials science forum, 2007-01, Vol.556-557, p.223-226

2007

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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Materials science forum, 2004-01, Vol.457-460, p.1061-1064

2004

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

Journal of applied physics, 2002-09, Vol.92 (5), p.2391-2400

2002

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Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Applied physics letters, 2007-07, Vol.91 (1)

2007

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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas

Materials science forum, 2006-10, Vol.527-529, p.279-282

2006

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Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

Materials science forum, 2006-10, Vol.527-529, p.1509-1512

2006

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Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

Materials science forum, 2004-01, Vol.457-460, p.261-264

2004

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Development of SiC-based Gas Sensors for Aerospace Applications

MRS proceedings, 2004, Vol.815, Article J4.4

2004

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Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

Materials science forum, 1998-02, Vol.264-268, p.421-424

1998

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Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

Materials science forum, 2006-01, Vol.527-529, p.1483-1488

2006

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Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

Applied physics letters, 2004-06, Vol.84 (25), p.5216-5218

2004

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Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

Applied physics letters, 2006-07, Vol.89 (4)

2006

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HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces

Materials science forum, 2009-03, Vol.615-617, p.593-596

2009

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Growth and characterization of 3C-SiC and 2H-AlN/GaN films and devices produced on step-free 4H-SiC mesa substrates: Wide band gap semiconductors

Journal of physics. D, Applied physics, 2007, Vol.40 (20), p.6139-6149

2007

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Valence band structure and band offset of 3 C - and 4 H - Si C studiedby ballistic hole emission microscopy

Applied physics letters, 2006-07, Vol.89 (4), p.042103-042103-3

2006

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HCI etching behavior on low-tilt-angle and step-free 4H-SiC surfaces

Materials science forum, 2009-01, Vol.615-617, p.593-596

2009

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Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition

CVD Growth of 3C-SiC on 4H/6H Mesas

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

Development of SiC-based Gas Sensors for Aerospace Applications

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces

Growth and characterization of 3C-SiC and 2H-AlN/GaN films and devices produced on step-free 4H-SiC mesa substrates: Wide band gap semiconductors

Valence band structure and band offset of 3 C - and 4 H - Si C studiedby ballistic hole emission microscopy

HCI etching behavior on low-tilt-angle and step-free 4H-SiC surfaces

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