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In-situ X-ray absorption spectroscopy analysis of capacity fade in nanoscale-LiCoO2

Journal of solid state chemistry, 2013-07, Vol.203, p.134-144

2013

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Increasing Efficiency of Photoelectronic Conversion by Encapsulation of Photosynthetic Reaction Center Proteins in Arrayed Carbon Nanotube Electrode

Langmuir, 2008-08, Vol.24 (16), p.8871-8876

2008

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Thiol-Terminated Di-, Tri-, and Tetraethylene Oxide Functionalized Gold Nanoparticles: A Water-Soluble, Charge-Neutral Cluster

Chemistry of materials, 2002-05, Vol.14 (5), p.2401-2408

2002

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SiGeSn buffer layer for the growth of GeSn films

Journal of applied physics, 2023-07, Vol.134 (2)

2023

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Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

Journal of applied physics, 2020-07, Vol.128 (1)

2020

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Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3−SnO2 Heterostructures for Gas Sensing Applications

Crystal growth & design, 2009-10, Vol.9 (10), p.4471-4479

2009

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Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography

Microscopy and microanalysis, 2018-08, Vol.24 (S1), p.398-399

2018

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Epitaxial Graphene Nucleation on C-Face Silicon Carbide

Nano letters, 2011-03, Vol.11 (3), p.1190-1194

2011

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Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2014-10, Vol.404, p.122-129

2014

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Growth and characterization of (110) InAs quantum well metamorphic heterostructures

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Initiating polarity inversion in GaN growth using an AlN interlayer

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1504-1506

2011

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Growth and Characterization of (110) InAs Quantum Well Heterostructures by Transmission Electron Microscopy and Electron Channeling Contrast Imaging

Microscopy and microanalysis, 2015-08, Vol.21 (S3), p.1675-1676

2015

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Size and Temperature Dependence of Band-Edge Excitons in PbSe Nanowires

The journal of physical chemistry letters, 2011-03, Vol.2 (6), p.527-531

2011

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Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates

MRS proceedings, 2008, Vol.1090 (1), Article 1090-Z05-24

2008

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Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Journal of electronic materials, 2008-05, Vol.37 (5), p.691-698

2008

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Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging

Materials science forum, 2009-01, Vol.615-617, p.435-438

2009

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Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

Journal of electronic materials, 2007-04, Vol.36 (4), p.297-306

2007

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Competition Between Thiol and Phosphine Ligands During the Synthesis of Au Nanoclusters

Journal of cluster science, 2008-12, Vol.19 (4), p.573-589

2008

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Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-03, Vol.36 (2)

2018

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Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC

Journal of applied physics, 2008-12, Vol.104 (12)

2008

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Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

Japanese Journal of Applied Physics, 2006-08, Vol.45 (8L), p.L814

2006

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High absorption long wave infrared superlattices using metamorphic buffers

Applied physics letters, 2017-05, Vol.110 (18)

2017

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Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

Materials science forum, 2004-01, Vol.457-460, p.533-536

2004

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Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

MRS proceedings, 2008, Vol.1068, Article 1068-C07-08

2008

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In-situ X-ray absorption spectroscopy analysis of capacity fade in nanoscale-LiCoO2

Increasing Efficiency of Photoelectronic Conversion by Encapsulation of Photosynthetic Reaction Center Proteins in Arrayed Carbon Nanotube Electrode

Thiol-Terminated Di-, Tri-, and Tetraethylene Oxide Functionalized Gold Nanoparticles: A Water-Soluble, Charge-Neutral Cluster

SiGeSn buffer layer for the growth of GeSn films

Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography

Growth of Sn-Doped β-Ga2O3 Nanowires and Ga2O3−SnO2 Heterostructures for Gas Sensing Applications

Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography

Epitaxial Graphene Nucleation on C-Face Silicon Carbide

Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

Initiating polarity inversion in GaN growth using an AlN interlayer

Growth and Characterization of (110) InAs Quantum Well Heterostructures by Transmission Electron Microscopy and Electron Channeling Contrast Imaging

Size and Temperature Dependence of Band-Edge Excitons in PbSe Nanowires

Dislocation Nucleation and Growth in MOCVD GaN/AlN Films on Stepped and Step-free 4H-SiC Mesa Substrates

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

Competition Between Thiol and Phosphine Ligands During the Synthesis of Au Nanoclusters

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC

Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

High absorption long wave infrared superlattices using metamorphic buffers

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

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