UB Paderborn / Katalog / Suche / in CDI

SiC and GaN transistors - is there one winner for microwave power applications?

Proceedings of the IEEE, 2002, Vol.90 (6), p.1032-1047

Trew, R.J.

2002

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IEEE_Xplore

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE transactions on microwave theory and techniques, 2006-05, Vol.54 (5), p.2061-2067

2006

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IEEE_Xplore

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Solid-state electronics, 2013-02, Vol.80, p.23-27

2013

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Microwave solid-state active devices

IEEE transactions on microwave theory and techniques, 2002-03, Vol.50 (3), p.760-779

2002

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IEEE_Xplore

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

Proceedings of the IEEE, 1991-05, Vol.79 (5), p.598-620

1991

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IEEE_Xplore

High power applications for GaN-based devices

Solid-state electronics, 1997-10, Vol.41 (10), p.1561-1567

1997

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The role of government support for research in U.S. academic institutions

IEEE transactions on microwave theory and techniques, 2002-03, Vol.50 (3), p.1028-1033

2002

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IEEE_Xplore

GaN MESFETs for high-power and high-temperature microwave applications

Electronics letters, 1995-03, Vol.31 (6), p.498-500

1995

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Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

IEEE electron device letters, 1990-12, Vol.11 (12), p.561-563

1990

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IEEE_Xplore

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

IEEE sensors journal, 2010-03, Vol.10 (3), p.765-771

2010

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IEEE_Xplore

Yield optimization using a GaAs process simulator coupled to a physical device model

IEEE transactions on microwave theory and techniques, 1992-07, Vol.40 (7), p.1353-1363

1992

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IEEE_Xplore

RF knee walkout and source access region of unpassivated HFETs

Electronics letters, 2006-11, Vol.42 (24), p.1425-1427

2006

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Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors

IEEE sensors journal, 2010-03, Vol.10 (3), p.443-450

2010

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IEEE_Xplore

Tribute to a Microwave Giant

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.299-300

Trew, R.J.

2007

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IEEE_Xplore

Low emitter resistance GaAs based HBT's without InGaAs caps

IEEE electron device letters, 1994-05, Vol.15 (5), p.154-156

1994

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IEEE_Xplore

Editorial Special Issue on Enhancement Algorithms, Methodologies and Technology for Spectral Sensing

IEEE sensors journal, 2010-03, Vol.10 (3), p.373-378

2010

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IEEE_Xplore

A new physics-based compact model for AlGaN/GaN HFETs

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.787-790

2007

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IEEE_Xplore

AlGaN/GaN HFET amplifier performance and limitations

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1811-1814 vol.3

Trew, R.J.

2002

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IEEE_Xplore

The Physics of Reliability for High Voltage AlGaN/GaN HFET's

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.103-106

2006

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IEEE_Xplore

A Look at DoD Support of Research: Maintaining the Pipeline for Academic Basic Research

MRS bulletin, 1999-09, Vol.24 (9), p.14-14

Trew, R.J.

1999

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RF Linearity and Nonlinear Source Resistance in AlGaN/GaN HFET's

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.597-600

2007

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IEEE_Xplore

President's column

IEEE microwave magazine, 2004-09, Vol.5 (3), p.10-12

Trew, R.J.

2004

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IEEE_Xplore

Speaker's Corner - DoD support for academic research

IEEE microwave magazine, 2000-03, Vol.1 (1), p.26-28

Trew, R.J.

2000

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IEEE_Xplore

RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.643-646

2006

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IEEE_Xplore

Gate breakdown in MESFETs and HEMTs

IEEE electron device letters, 1991-10, Vol.12 (10), p.524-526

1991

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IEEE_Xplore

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SiC and GaN transistors - is there one winner for microwave power applications?

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Microwave solid-state active devices

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

High power applications for GaN-based devices

The role of government support for research in U.S. academic institutions

GaN MESFETs for high-power and high-temperature microwave applications

Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

Yield optimization using a GaAs process simulator coupled to a physical device model

RF knee walkout and source access region of unpassivated HFETs

Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors

Tribute to a Microwave Giant

Low emitter resistance GaAs based HBT's without InGaAs caps

Editorial Special Issue on Enhancement Algorithms, Methodologies and Technology for Spectral Sensing

A new physics-based compact model for AlGaN/GaN HFETs

AlGaN/GaN HFET amplifier performance and limitations

The Physics of Reliability for High Voltage AlGaN/GaN HFET's

A Look at DoD Support of Research: Maintaining the Pipeline for Academic Basic Research

RF Linearity and Nonlinear Source Resistance in AlGaN/GaN HFET's

President's column

Speaker's Corner - DoD support for academic research

RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's

Gate breakdown in MESFETs and HEMTs

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