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Improving EBSD precision by orientation refinement with full pattern matching

Journal of microscopy (Oxford), 2020-02, Vol.277 (2), p.79-92

2020

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Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns

Physical review. B, Condensed matter and materials physics, 2015-11, Vol.92 (20), Article 205301

2015

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Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications

Journal of microscopy (Oxford), 2017-09, Vol.267 (3), p.330-346

2017

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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

Physica status solidi. A, Applications and materials science, 2017-01, Vol.214 (1), p.n/a

2017

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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Journal of applied physics, 2022-02, Vol.131 (7)

2022

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Polarity Determination in GaN Nanowires by Electron Backscatter Diffraction

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.2404-2405

2019

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Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope

Nano letters, 2019-06, Vol.19 (6), p.3863-3870

2019

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Subgrain structure and dislocations in WC-Co hard metals revealed by electron channelling contrast imaging

International journal of refractory metals & hard materials, 2020-02, Vol.87, p.105159, Article 105159

2020

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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Journal of crystal growth, 2020-02, Vol.531, p.125343, Article 125343

2020

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Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon

Scientific reports, 2020-07, Vol.10 (1), p.12650-12650, Article 12650

2020

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Electron Channelling Contrast Imaging in a Low Voltage Scanning Electron Microscope

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.504-505

2019

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Imaging Extended Defects in Low Z materials using Electron Channelling Contrast Imaging – New Approaches and Challenges

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.1760-1761

2019

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Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

Applied physics letters, 2002-08, Vol.81 (7), p.1207-1209

2002

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Practical application of direct electron detectors to EBSD mapping in 2D and 3D

Ultramicroscopy, 2018-01, Vol.184 (Pt A), p.242-251

2018

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Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope

Ultramicroscopy, 2020-06, Vol.213, p.112977-112977, Article 112977

2020

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP advances, 2014-12, Vol.4 (12), p.127101-127101-13

2014

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Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope

Physical review letters, 2012-03, Vol.108 (13), p.135503-135503, Article 135503

2012

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Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Journal of crystal growth, 2017-05, Vol.466, p.30-38

2017

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Exploring transmission Kikuchi diffraction using a Timepix detector

Journal of instrumentation, 2017-02, Vol.12 (2), p.C02075-C02075

2017

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Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Semiconductor science and technology, 2020-05, Vol.35 (5), p.54001

2020

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Europium doping of zincblende GaN by ion implantation

Journal of applied physics, 2009-06, Vol.105 (11), p.113507-113507-5

2009

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Electron channelling contrast imaging for III-nitride thin film structures

Materials science in semiconductor processing, 2016-06, Vol.47, p.44-50

2016

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Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (8), Article 085301

2007

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Rare earth doping of III-nitride alloys by ion implantation

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.34-37

2008

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Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

Physica status solidi. A, Applications and materials science, 2012-03, Vol.209 (3), p.424-426

2012

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Improving EBSD precision by orientation refinement with full pattern matching

Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns

Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications

Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Polarity Determination in GaN Nanowires by Electron Backscatter Diffraction

Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope

Subgrain structure and dislocations in WC-Co hard metals revealed by electron channelling contrast imaging

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon

Electron Channelling Contrast Imaging in a Low Voltage Scanning Electron Microscope

Imaging Extended Defects in Low Z materials using Electron Channelling Contrast Imaging – New Approaches and Challenges

Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

Practical application of direct electron detectors to EBSD mapping in 2D and 3D

Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Exploring transmission Kikuchi diffraction using a Timepix detector

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Europium doping of zincblende GaN by ion implantation

Electron channelling contrast imaging for III-nitride thin film structures

Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

Rare earth doping of III-nitride alloys by ion implantation

Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

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