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InSe as a case between 3D and 2D layered crystals for excitons

Nature communications, 2019-08, Vol.10 (1), p.3479-8, Article 3479

2019

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Determination of light-independent shunt resistance in CIGS photovoltaic cells using a collection function-based model

Journal of applied physics, 2024-07, Vol.136 (2)

2024

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Analysis of the gallium gradient in Cu(In1-xGax)Se2 absorbers by X-ray diffraction

Solar energy materials and solar cells, 2021-01, Vol.220, p.110847, Article 110847

2021

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Extended Defects in SiC: Selective Etching and Raman Study

Journal of electronic materials, 2023-08, Vol.52 (8), p.5039-5046

2023

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Reversible optical doping of graphene

Scientific reports, 2013-08, Vol.3 (1), p.2355-2355, Article 2355

2013

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (8), Article 085422

2014

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Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure

Physica. E, Low-dimensional systems & nanostructures, 2016-01, Vol.75, p.7-14

2016

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Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors

Applied physics letters, 2006-11, Vol.89 (22), p.222109-222109-3

2006

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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

Solar energy materials and solar cells, 2021-01, Vol.220

2021

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In-plane propagation of excitonic cavity polaritons

Physical review. B, Condensed matter, 2000-03, Vol.61 (11), p.7233-7236

2000

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Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

Physical review. B, Condensed matter and materials physics, 2009, Vol.80 (24), p.241406

2009

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Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN ∕ GaN heterostructures

Applied physics letters, 2005-12, Vol.87 (23), p.232107-232107-3

2005

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Strain effects in device processing of silicon-on-insulator materials

Applied surface science, 2003-05, Vol.212-213, p.742-748

2003

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Low electron mobility of field-effect transistor determined by modulated magnetoresistance

Journal of applied physics, 2007-11, Vol.102 (10), p.103701-103701-7

2007

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Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Materials science forum, 2010, Vol.645-648, p.607-610

2010

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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(In1−xGax) Se2 solar cells

Solar energy materials and solar cells, 2018-01, Vol.174, p.418-422

2018

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Differences between Graphene Grown on Si-Face and C-Face

Materials science forum, 2010-01, Vol.645-648, p.581-584

2010

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Process-induced strain in silicon-on-insulator materials

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13411-13416

2002

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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Materials science forum, 2009-01, Vol.615-617, p.45-48

2009

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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(^sub 1-x^Ga^sub x^) Se^sub 2^ solar cells

Solar energy materials and solar cells, 2018-01, Vol.174, p.418

2018

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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells

Solar energy materials and solar cells, 2018-01, Vol.174, p.418-422

2018

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AFM and Raman Studies of Graphene Exfoliated on SiC

Materials science forum, 2009-01, Vol.615-617, p.215-218

2009

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Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Materials science forum, 2009, Vol.615-617, p.203-206

2009

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InSe as a case between 3D and 2D layered crystals for excitons

Determination of light-independent shunt resistance in CIGS photovoltaic cells using a collection function-based model

Analysis of the gallium gradient in Cu(In1-xGax)Se2 absorbers by X-ray diffraction

Extended Defects in SiC: Selective Etching and Raman Study

Reversible optical doping of graphene

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Growth protocols and characterization of epitaxial graphene on SiC elaborated in a graphite enclosure

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors

Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

In-plane propagation of excitonic cavity polaritons

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN ∕ GaN heterostructures

Strain effects in device processing of silicon-on-insulator materials

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(In1−xGax) Se2 solar cells

Differences between Graphene Grown on Si-Face and C-Face

Process-induced strain in silicon-on-insulator materials

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu(^sub 1-x^Ga^sub x^) Se^sub 2^ solar cells

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells

AFM and Raman Studies of Graphene Exfoliated on SiC

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

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