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A compact drain current model of short-channel cylindrical gate-all-around MOSFETs

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075017-075017 (8)

2009

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Analytical unified threshold voltage model of short-channel FinFETs and implementation

Solid-state electronics, 2011-10, Vol.64 (1), p.34-41

2011

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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Solid-state electronics, 2011-03, Vol.57 (1), p.31-34

2011

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Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

Semiconductor science and technology, 2009-12, Vol.24 (12), p.125001-125001 (6)

2009

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Symmetrical unified compact model of short-channel double-gate MOSFETs

Solid-state electronics, 2012-03, Vol.69, p.55-61

2012

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Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs

Microelectronic engineering, 2012-02, Vol.90 (Feb), p.9-11

2012

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Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs

Microelectronic engineering, 2010-11, Vol.87 (11), p.2353-2357

2010

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Stability of Amorphous-Silicon and Nanocrystalline Silicon Thin-Film Transistors Under DC and AC Stress

IEEE electron device letters, 2007-09, Vol.28 (9), p.803-805

2007

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Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise

Journal of applied physics, 2010-11, Vol.108 (10), p.106103-106103-3

2010

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Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

Microelectronic engineering, 2010-11, Vol.87 (9), p.1764-1768

2010

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Reply to 'Comment on "A compact drain current model of short-channel cylindrical gate-all-around MOSFETs"'

Semiconductor science and technology, 2014-03, Vol.29 (3), p.38002

2014

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Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots

IEEE electron device letters, 2006-05, Vol.27 (5), p.320-322

2006

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Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots

Semiconductor science and technology, 2004-03, Vol.19 (3), p.461-467

2004

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Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1086-1091

2007

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Experimental investigation of noise in 4H–SiC p+–n–n+ junctions

Semiconductor science and technology, 2006-05, Vol.21 (5), p.591-593, Article 591

2006

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Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1991-1994

2003

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On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors

Journal of applied physics, 1996-04, Vol.79 (8), p.4431-4437

1996

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High-field transport and noise properties of sputter-deposited amorphous carbon–silicon heterojunctions

Semiconductor science and technology, 2002-07, Vol.17 (7), p.662-667

2002

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Effects of hot carriers in offset gated polysilicon thin-film transistors

Microelectronics and reliability, 2006-02, Vol.46 (2), p.311-316

2006

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Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors

Solid-state electronics, 2005-03, Vol.49 (3), p.513-515

2005

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Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors

Journal of applied physics, 1993-08, Vol.74 (4), p.2919-2924

1993

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Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

Solid-state electronics, 2020-08, Vol.170, p.107835, Article 107835

2020

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On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1727-1733

2005

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Stability of n -channel a - Si : H ∕ nc - Si : H bilayer thin-film transistors under dynamic stress

Journal of applied physics, 2008-04, Vol.103 (8), p.084514-084514-5

2008

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The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting FeSi2 films

Journal of applied physics, 1998-09, Vol.84 (5), p.2960-2962

1998

Volltextzugriff (PDF)

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A compact drain current model of short-channel cylindrical gate-all-around MOSFETs

Analytical unified threshold voltage model of short-channel FinFETs and implementation

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

Symmetrical unified compact model of short-channel double-gate MOSFETs

Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs

Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs

Stability of Amorphous-Silicon and Nanocrystalline Silicon Thin-Film Transistors Under DC and AC Stress

Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise

Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

Reply to 'Comment on "A compact drain current model of short-channel cylindrical gate-all-around MOSFETs"'

Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots

Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Experimental investigation of noise in 4H–SiC p+–n–n+ junctions

Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors

On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors

High-field transport and noise properties of sputter-deposited amorphous carbon–silicon heterojunctions

Effects of hot carriers in offset gated polysilicon thin-film transistors

Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors

Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries

Stability of n -channel a - Si : H ∕ nc - Si : H bilayer thin-film transistors under dynamic stress

The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting FeSi2 films

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