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Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

IEEE electron device letters, 2017-01, Vol.38 (1), p.48-51

2017

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Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film

IEEE electron device letters, 2022-12, Vol.43 (12), p.1-1

2022

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Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1734-1740

2019

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Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Neuroprotective effect of osthole on MPP +-induced cytotoxicity in PC12 cells via inhibition of mitochondrial dysfunction and ROS production

Neurochemistry international, 2010-10, Vol.57 (3), p.206-215

2010

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Deteriorated Non-Linear Interference in 3D NAND Cell With Word-Line Pitch Scaling Due to the Incapability to Turn on Non-Gate-Controlled Region

IEEE electron device letters, 2023-11, Vol.44 (11), p.1837-1840

2023

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The effect of staggered administration of zinc sulfate on the pharmacokinetics of oral cephalexin

British journal of clinical pharmacology, 2012-03, Vol.73 (3), p.422-427

2012

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A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1620-1627

2011

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Investigation of V th Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2260-2264

2021

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Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2260-2264

2021

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Impact on L‐carnitine Homeostasis of Short‐term Treatment with the Pivalate Prodrug Tenofovir Dipivoxil

Basic & clinical pharmacology & toxicology, 2013-12, Vol.113 (6), p.431-435

2013

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Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on } Retention Loss in a Multilevel Charge Trap Flash Memory

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5155-5161

2019

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Charge-based capacitance measurement for bias-dependent capacitance

IEEE electron device letters, 2006-05, Vol.27 (5), p.390-392

2006

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Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split C- V Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices

IEEE electron device letters, 2008-06, Vol.29 (6), p.641-644

2008

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Profiling of Nitride-Trap-Energy Distribution in SONOS Flash Memory by Using a Variable-Amplitude Low-Frequency Charge-Pumping Technique

IEEE electron device letters, 2007-09, Vol.28 (9), p.828-830

2007

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A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.541-546

2005

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Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation

IEEE electron device letters, 2004-02, Vol.25 (2), p.95-97

2004

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Synthesis, crystal structure, superoxide scavenging activity, anticancer and docking studies of novel adamantyl nitroxide derivatives

Journal of molecular structure, 2016-03, Vol.1108, p.611-617

2016

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A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport

IEEE electron device letters, 2009-02, Vol.30 (2), p.165-167

2009

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A novel simple CBCM method free from charge injection-induced errors

IEEE electron device letters, 2004-05, Vol.25 (5), p.262-264

2004

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A novel gate-coupled SCR ESD protection structure with high latchup immunity for high-speed I/O pad

IEEE electron device letters, 2004-05, Vol.25 (5), p.328-330

2004

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Enhanced PMOS-triggered PMLSCR with robust EOS immunity

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.2B.4.1-2B.4.5

2013

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Extending attributes page： a scheme for enhancing the reliability of storage system metadata

Journal of Zhejiang University. A. Science, 2009-08, Vol.10 (8), p.1106-1113

2009

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Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

IEEE transactions on semiconductor manufacturing, 2006-02, Vol.19 (1), p.50-56

2006

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Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell

IEEE electron device letters, 2004-07, Vol.25 (7), p.495-497

2004

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Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film

Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Neuroprotective effect of osthole on MPP +-induced cytotoxicity in PC12 cells via inhibition of mitochondrial dysfunction and ROS production

Deteriorated Non-Linear Interference in 3D NAND Cell With Word-Line Pitch Scaling Due to the Incapability to Turn on Non-Gate-Controlled Region

The effect of staggered administration of zinc sulfate on the pharmacokinetics of oral cephalexin

A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

Investigation of V th Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory

Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory

Impact on L‐carnitine Homeostasis of Short‐term Treatment with the Pivalate Prodrug Tenofovir Dipivoxil

Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on } Retention Loss in a Multilevel Charge Trap Flash Memory

Charge-based capacitance measurement for bias-dependent capacitance

Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split C- V Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices

Profiling of Nitride-Trap-Energy Distribution in SONOS Flash Memory by Using a Variable-Amplitude Low-Frequency Charge-Pumping Technique

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation

Synthesis, crystal structure, superoxide scavenging activity, anticancer and docking studies of novel adamantyl nitroxide derivatives

A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport

A novel simple CBCM method free from charge injection-induced errors

A novel gate-coupled SCR ESD protection structure with high latchup immunity for high-speed I/O pad

Enhanced PMOS-triggered PMLSCR with robust EOS immunity

Extending attributes page： a scheme for enhancing the reliability of storage system metadata

Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell

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