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Elastic, structural, bonding, and defect properties of zinc-blende BN, AlN, GaN, InN and their alloys

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-03, Vol.90 (3), p.269-277

2002

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Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition

Optical materials express, 2018-10, Vol.8 (10), p.3184

2018

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Pressure dependent phonon properties of cubic group III-nitrides

Phys. Status Solidi (b). Vol. 235, no. 2, pp. 254-259. 2003, 2003-02, Vol.235 (2), p.254-259

Talwar, D. N.

2003

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Thermal expansion coefficient of 3C–SiC

Applied physics letters, 1995-11, Vol.67 (22), p.3301-3303

1995

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Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

Journal of applied physics, 1996-07, Vol.80 (1), p.594-596

1996

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Dispersion of optical and acoustical phonons in the zinc-blende group III-nitride superlattices

Microelectronic engineering, 1998-08, Vol.43-44, p.309-318

Talwar, D.N

1998

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Phonon excitations and thermodynamic properties of cubic III nitrides

Applied physics letters, 2002-03, Vol.80 (9), p.1553-1555

Talwar, D. N.

2002

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Vibrational properties of HgCdTe system

Journal of applied physics, 1984-09, Vol.56 (6), p.1601-1607

1984

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Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation

Computational materials science, 2004-08, Vol.30 (3), p.419-424

2004

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Possible Mechanism of Superconductivity in Metal-Semiconductor Eutectic Alloys

Physical review letters, 1980-10, Vol.45 (14), p.1213-1216

1980

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Novel type II strained layer superlattices for long wavelength infrared detectors

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.12-17

1998

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Electronic structure of ternary alloy semiconductors

Solid state communications, 1996, Vol.97 (4), p.315-318

1996

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Incorporation of carbon in heavily doped AlxGa1-xAs grown by metalorganic molecular beam epitaxy

Applied physics letters, 1990-07, Vol.57 (3), p.294-296

1990

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Assessment of microscopic lattice structures in dilute (AlGaIn)NAs laser materials by local mode spectroscopy and numerical simulations

Journal of applied physics, 2006-06, Vol.99 (12), p.123505-123505-10

Talwar, D. N.

2006

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Isochronal annealing of local vibrational modes in proton- and deuteron-implanted InP

Journal of applied physics, 1993, Vol.73 (1), p.78-83

1993

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Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs(001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region

Journal of Material Science & Engineering, 2016, Vol.5 (5)

2016

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Lattice dynamics of II-VI based diluted magnetic semiconductors

Journal of applied physics, 1990-10, Vol.68 (8), p.4332-4334

1990

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Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

Journal of Material Science & Engineering, 2017, Vol.6 (2)

2017

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Tight-binding description for the bound electronic states of isolated single and paired native defects in β-SiC

Physical review. B, Condensed matter, 1991-08, Vol.44 (7), p.3191-3198

1991

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Chemical bonding of nitrogen in dilute InAsN and high In-content GaInAsN

Physica status solidi. C, 2007-02, Vol.4 (2), p.674-677

Talwar, D. N.

2007

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Localized excitations in diluted magnetic Cd1−xMnxTe semiconductor ternary alloys and CdTe/Cd1−xMnxTe superlattices

Physica. B, Condensed matter, 1999-03, Vol.263-264, p.540-545

1999

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Phonons in cubic GaN/AlN semiconductor superlattices

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-06, Vol.47 (2), p.155-160

Talwar, D.N

1997

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On the anomalous phonon mode behavior in HgSe

Journal of applied physics, 1984-11, Vol.56 (9), p.2541-2546

1984

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Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

Journal of electronic materials, 1993-12, Vol.22 (12), p.1445-1448

1993

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Characterisation of intrinsic and compensated defect microstructures in dilute III–V–N alloys

IEE proceedings. Circuits, devices, and systems, 2003-12, Vol.150 (6), p.529

Talwar, D.N.

2003

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Elastic, structural, bonding, and defect properties of zinc-blende BN, AlN, GaN, InN and their alloys

Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition

Pressure dependent phonon properties of cubic group III-nitrides

Thermal expansion coefficient of 3C–SiC

Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

Dispersion of optical and acoustical phonons in the zinc-blende group III-nitride superlattices

Phonon excitations and thermodynamic properties of cubic III nitrides

Vibrational properties of HgCdTe system

Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation

Possible Mechanism of Superconductivity in Metal-Semiconductor Eutectic Alloys

Novel type II strained layer superlattices for long wavelength infrared detectors

Electronic structure of ternary alloy semiconductors

Incorporation of carbon in heavily doped AlxGa1-xAs grown by metalorganic molecular beam epitaxy

Assessment of microscopic lattice structures in dilute (AlGaIn)NAs laser materials by local mode spectroscopy and numerical simulations

Isochronal annealing of local vibrational modes in proton- and deuteron-implanted InP

Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs(001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region

Lattice dynamics of II-VI based diluted magnetic semiconductors

Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

Tight-binding description for the bound electronic states of isolated single and paired native defects in β-SiC

Chemical bonding of nitrogen in dilute InAsN and high In-content GaInAsN

Localized excitations in diluted magnetic Cd1−xMnxTe semiconductor ternary alloys and CdTe/Cd1−xMnxTe superlattices

Phonons in cubic GaN/AlN semiconductor superlattices

On the anomalous phonon mode behavior in HgSe

Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

Characterisation of intrinsic and compensated defect microstructures in dilute III–V–N alloys

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