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Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Small (Weinheim an der Bergstrasse, Germany), 2022-10, Vol.18 (40), p.n/a

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.n/a

2022

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Mesoporous Metal Fluoride Nanocomposite Films with Tunable Optical Properties Derived from Precursor Instability

Small (Weinheim an der Bergstrasse, Germany), 2023-10, Vol.19 (41), p.e2301395-e2301395

2023

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Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors

Dalton transactions : an international journal of inorganic chemistry, 2023-10, Vol.52 (41), p.15033-15042

2023

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Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition

The Journal of chemical physics, 2024-01, Vol.160 (2)

2024

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Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

European journal of inorganic chemistry, 2021-07, Vol.2021 (25), p.2480-2485

2021

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Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Chemistry of materials, 2017-10, Vol.29 (19), p.8100-8110

2017

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Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Chemistry of materials, 2014-11, Vol.26 (21), p.6088-6091

2014

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Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Advanced materials interfaces, 2021-01, Vol.8 (1), p.n/a

2021

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Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors

European journal of inorganic chemistry, 2020-06, Vol.2020 (21), p.2074-2079

2020

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Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Advanced optical materials, 2024-01, Vol.12 (2), p.n/a

2024

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Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device

Small (Weinheim an der Bergstrasse, Germany), 2017-10, Vol.13 (40), p.n/a

2017

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Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (12), p.3139-3145

2017

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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

ACS applied materials & interfaces, 2016-10, Vol.8 (40), p.26924-26931

2016

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Low-temperature wafer-scale synthesis of two-dimensional SnS2

Nanoscale, 2018-10, Vol.10 (37), p.17712-17721

2018

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Heteroleptic manganese compounds as potential precursors for manganese based thin films and nanomaterials

RSC advances, 2020-08, Vol.1 (5), p.29659-29667

2020

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Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Advanced materials interfaces, 2023-06, Vol.10 (17), p.n/a

2023

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Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature communications, 2024-03, Vol.15 (1), p.2138-2138, Article 2138

2024

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Synthesis and characterization of Sn complexes containing aminoalkoxide ligands for solution process

Molecular Crystals and Liquid Crystals, 2023-07, Vol.760 (1), p.44-50

2023

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Heteroleptic Group 2 Metal Precursors for Metal Oxide Thin Films

European journal of inorganic chemistry, 2014-04, Vol.2014 (11), p.2002-2010

2014

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Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (11), p.382-3825

2021

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2023-03, Vol.35 (13), p.n/a

2023

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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Progress in photovoltaics, 2018-09, Vol.26 (9), p.745-751

2018

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Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

Dalton transactions : an international journal of inorganic chemistry, 2020-04, Vol.49 (14), p.436-4314

2020

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Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Mesoporous Metal Fluoride Nanocomposite Films with Tunable Optical Properties Derived from Precursor Instability

Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors

Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors

Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Low-temperature wafer-scale synthesis of two-dimensional SnS2

Heteroleptic manganese compounds as potential precursors for manganese based thin films and nanomaterials

Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Synthesis and characterization of Sn complexes containing aminoalkoxide ligands for solution process

Heteroleptic Group 2 Metal Precursors for Metal Oxide Thin Films

Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

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