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0.013 mm 2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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0.013 mm super(2) and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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A 0.016 mV/mA Cross-Regulation 5-Output SIMO DC-DC Buck Converter Using Output-Voltage-Aware Charge Control Scheme

IEEE transactions on power electronics, 2018-11, Vol.33 (11), p.9619-9630

2018

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A 0.02mm super(2) embedded temperature sensor with plus or minus 2 degree C inaccuracy for self-refresh control in 25nm mobile DRAM

Proceedings of ESSCIRC, 2015-09, p.267-270

2015

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A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC), 2015, p.267-270

2015

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0.1-Hz 1-PW Ti:Sapphire Laser Facility

Proceedings of the Conference of Light at Extreme Intensities, 2009-10, Vol.1228, p.186-189

2009

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0.1 Hz 4.0 PW Ti:Sapphire laser at CoReLS

2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015, Vol.2, p.1-2

2015

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0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

IEEE journal of solid-state circuits, 2016-06, Vol.51 (6), p.1487-1498

2016

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A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2S), p.865

1996

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A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

Japanese journal of applied physics, 1996-02, Vol.35 (2B), p.865-868

1996

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A 0.33-1 GHz Open-Loop Duty Cycle Corrector With Digital Falling Edge Modulator

IEEE transactions on circuits and systems. II, Express briefs, 2018-12, Vol.65 (12), p.1949-1953

2018

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A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.322-324

2018

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La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ 산소 투과 분리막의 제조 및 특성

Hanʼguk Seramik Hakhoe chi, 2001, Vol.38 (10), p.886-893

2001

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A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012, p.1-4

2012

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0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation Tolerance

IEEE journal of solid-state circuits, 2014-07, Vol.49 (7), p.1487-1498

2014

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A 0.791mm2 fully on-chip controller with self-error-correction for boost DC-DC converter based on Zero-Order Control

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012, p.1-4

2012

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La 0.8 Sr 0.2 Ga 0.8 Mg 0.2-x Zn x O 2.8 (X=0.0~0.05) 전해질의 저온 소결 특성

Hanʼguk Seramik Hakhoe chi, 2014, Vol.51 (3), p.208-217

2014

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Li 0.98 Ni 0.7 Ti 0.3 O 1.92 cathode materials fabricated by thermal synthesis of Ni/Li/TiNi film

Physica scripta, 2007-12, Vol.T129, p.218-221

2007

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(001) Proposal to add a new Note and Example to illustrate Article 6.11

Taxon, 2020-06, Vol.69 (3), p.623-623

2020

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01 Hz 10 PW Ti:sapphire laser

Optics letters, 2010-09, Vol.35 (18), p.3021

2010

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0168 Sleep and Academic Performance in Korean High School Students

Sleep (New York, N.Y.), 2019-04, Vol.42 (Supplement_1), p.A69-A69

2019

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0261 Sleep Disturbance Reliably Predicted by Pain Sensitivity in Sciatic Nerve Crush Injury Model

Sleep (New York, N.Y.), 2023-05, Vol.46 (Supplement_1), p.A116-A117

2023

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03 Palmitate Induces Necrosis by Stimulating Phospholipid accumulation in RAW 264.7 cells, and Promotes Phagosome maturation in SW-10 cells

Japanese Journal of Leprosy, 2014-07, Vol.83 (2), p.61-61

2014

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0349 Robust inter-beat interval estimation algorithm using clustering method

Sleep (New York, N.Y.), 2022-05, Vol.45 (Supplement_1), p.A157-A157

2022

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0.013 mm 2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects

0.013 mm super(2) and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

A 0.016 mV/mA Cross-Regulation 5-Output SIMO DC-DC Buck Converter Using Output-Voltage-Aware Charge Control Scheme

A 0.02mm super(2) embedded temperature sensor with plus or minus 2 degree C inaccuracy for self-refresh control in 25nm mobile DRAM

A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

0.1-Hz 1-PW Ti:Sapphire Laser Facility

0.1 Hz 4.0 PW Ti:Sapphire laser at CoReLS

0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

A 0.25 µm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

A 0.33-1 GHz Open-Loop Duty Cycle Corrector With Digital Falling Edge Modulator

A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ 산소 투과 분리막의 제조 및 특성

A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation Tolerance

A 0.791mm2 fully on-chip controller with self-error-correction for boost DC-DC converter based on Zero-Order Control

La 0.8 Sr 0.2 Ga 0.8 Mg 0.2-x Zn x O 2.8 (X=0.0~0.05) 전해질의 저온 소결 특성

Li 0.98 Ni 0.7 Ti 0.3 O 1.92 cathode materials fabricated by thermal synthesis of Ni/Li/TiNi film

(001) Proposal to add a new Note and Example to illustrate Article 6.11

01 Hz 10 PW Ti:sapphire laser

0168 Sleep and Academic Performance in Korean High School Students

0261 Sleep Disturbance Reliably Predicted by Pain Sensitivity in Sciatic Nerve Crush Injury Model

03 Palmitate Induces Necrosis by Stimulating Phospholipid accumulation in RAW 264.7 cells, and Promotes Phagosome maturation in SW-10 cells

0349 Robust inter-beat interval estimation algorithm using clustering method

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