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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509

2020

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

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Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.651-665

2014

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High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2054-2060

2017

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3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.107-113

2023

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Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

ACS omega, 2021-01, Vol.6 (1), p.733-738

2021

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Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2824-2829

2024

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Corrections to "Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review"

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3983-3983

2023

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Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film

ECS journal of solid state science and technology, 2024-04, Vol.13 (4), p.45003

2024

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Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

ECS journal of solid state science and technology, 2023-05, Vol.12 (5), p.55006

2023

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Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

ECS journal of solid state science and technology, 2017, Vol.6 (5), p.P350-P355

2017

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Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

2023 Silicon Nanoelectronics Workshop (SNW), 2023, p.113-114

2023

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Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

ECS journal of solid state science and technology, 2014-01, Vol.3 (5), p.P122-P125

2014

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Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

ECS journal of solid state science and technology, 2013-01, Vol.2 (7), p.P293-P298

2013

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High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.6.2.1-6.2.4

2015

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Low-temperature microwave annealing processes for future IC fabrication

2014 IEEE International Nanoelectronics Conference (INEC), 2014, p.1-4

2014

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Characteristics of In 0.7 Ga 0.3 As MOS Capacitors with Sulfur and Hydrazine Pretreatments

ECS journal of solid state science and technology, 2021-09, Vol.10 (9), p.95002

2021

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Investigation of Boron Distribution at the SiO 2 /Si Interface of Monolayer Doping

ACS omega, 2021-01, Vol.6 (1), p.733-738

2021

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Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si 1- x Ge x alloys channel on (110) and (111) Si substrates

Journal of applied physics, 2012-02, Vol.111 (3), p.033712-033712-8

2012

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Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1- x Ge x alloys channel on (110) and (111) Si substrates

Journal of applied physics, 2012-02, Vol.111 (3)

2012

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Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

2013 13th International Workshop on Junction Technology (IWJT), 2013, p.84-87

2013

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Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications

2023 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2023, p.154-156

2023

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Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

2023 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2023, p.126-128

2023

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Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor With Nanosheet Channel

2023 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2023, p.129-131

2023

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Single‐nucleotide polymorphism at alcohol dehydrogenase 1B: A susceptible gene marker in oro‐/hypopharyngeal cancers from genome‐wide association study

Cancer medicine (Malden, MA), 2023-09, Vol.12 (18), p.19174-19187

2023

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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review

High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention

Corrections to "Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review"

Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film

Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Low-temperature microwave annealing processes for future IC fabrication

Characteristics of In 0.7 Ga 0.3 As MOS Capacitors with Sulfur and Hydrazine Pretreatments

Investigation of Boron Distribution at the SiO 2 /Si Interface of Monolayer Doping

Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si 1- x Ge x alloys channel on (110) and (111) Si substrates

Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1- x Ge x alloys channel on (110) and (111) Si substrates

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications

Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor With Nanosheet Channel

Single‐nucleotide polymorphism at alcohol dehydrogenase 1B: A susceptible gene marker in oro‐/hypopharyngeal cancers from genome‐wide association study

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