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Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

Materials research bulletin, 2012-12, Vol.47 (12), p.4467-4471

2012

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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Applied physics letters, 2010-02, Vol.96 (8), p.081907-081907-3

2010

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GaN nanowire ultraviolet photodetector with a graphene transparent contact

Applied physics letters, 2013-11, Vol.103 (20), p.201103

2013

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GaN nanorod arrays as a high-stability field emitter

Journal of the Korean Physical Society, 2017, 71(6), , pp.340-344

2017

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Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films

Solar energy materials and solar cells, 2013-06, Vol.113, p.171-178

2013

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Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy

Applied physics letters, 2003-03, Vol.82 (10), p.1601-1603

2003

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Evolution of nanoripples on silicon by gas cluster-ion irradiation

AIP advances, 2013-06, Vol.3 (6), p.062107-062107

2013

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Resonant cavity light-emitting diode

Applied physics letters, 1992-02, Vol.60 (8), p.921-923

1992

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Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Carrier dynamics and intervalley scattering in InN

Optical materials, 2009-10, Vol.31 (12), p.1857-1859

2009

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Epitaxial GaN nanorods free from strain and luminescent defects

Applied physics letters, 2006-04, Vol.88 (15), p.153124-153124-3

2006

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Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.2233-2235

2010

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Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Journal of electronic materials, 2018, Vol.47 (1), p.359-367

2018

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Role of impurities and dislocations for the unintentional n-type conductivity in InN

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4476-4481

2009

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High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Applied physics letters, 2000-12, Vol.77 (23), p.3788-3790

2000

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Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

Journal of electronic materials, 2017-04, Vol.46 (4), p.2030-2039

2017

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Anti-reflection sub-wavelength structures design for InGaN-based solar cells performed by the finite-difference-time-domain (FDTD) simulation method

Optics and laser technology, 2015-04, Vol.67, p.72-77

2015

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Carrier recombination dynamics in Si doped InN thin films

Journal of applied physics, 2011-07, Vol.110 (2), p.023703-023703-5

2011

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Photogated transistor of III-nitride nanorods

Applied physics letters, 2010-03, Vol.96 (10), p.101114-101114-3

2010

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Auger recombination in InN thin films

Applied physics letters, 2008-01, Vol.92 (4), p.042101-042101-3

2008

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Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

Journal of applied physics, 2011-09, Vol.110 (6), p.063535-063535-6

2011

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Energy relaxation of InN thin films

Applied physics letters, 2007-08, Vol.91 (9), p.092108-092108-3

2007

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Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy

Applied physics letters, 1996-06, Vol.68 (25), p.3605-3607

1996

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Catalytic nanocapillary condensation and epitaxial GaN nanorod growth

Physical review. B, Condensed matter and materials physics, 2005-06, Vol.71 (23), p.235314.1-235314.5, Article 235314

2005

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Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

GaN nanowire ultraviolet photodetector with a graphene transparent contact

GaN nanorod arrays as a high-stability field emitter

Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films

Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy

Evolution of nanoripples on silicon by gas cluster-ion irradiation

Resonant cavity light-emitting diode

Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

Carrier dynamics and intervalley scattering in InN

Epitaxial GaN nanorods free from strain and luminescent defects

Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Role of impurities and dislocations for the unintentional n-type conductivity in InN

High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

Anti-reflection sub-wavelength structures design for InGaN-based solar cells performed by the finite-difference-time-domain (FDTD) simulation method

Carrier recombination dynamics in Si doped InN thin films

Photogated transistor of III-nitride nanorods

Auger recombination in InN thin films

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

Energy relaxation of InN thin films

Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy

Catalytic nanocapillary condensation and epitaxial GaN nanorod growth

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