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Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors

Journal of alloys and compounds, 2014-08, Vol.603, p.268-273

2014

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Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

Journal of applied physics, 2017-03, Vol.121 (10)

2017

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Growth of lanthanide-doped YF3 thin films by pulsed liquid injection MOCVD: Influence of deposition parameters on film microstructure

Surface & coatings technology, 2013-09, Vol.230, p.22-27

2013

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Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of physics. D, Applied physics, 2015-07, Vol.48 (26), p.1-10

2015

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How to switch from a tip to base growth mechanism in carbon nanotube growth by catalytic chemical vapour deposition

Carbon (New York), 2010-11, Vol.48 (13), p.3953-3963

2010

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Influence of precursor nature on the thermal growth of Tin–Indium oxide layers by MOCVD

Surface & coatings technology, 2013-09, Vol.230, p.305-311

2013

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A comparative study of Spark Plasma Sintering (SPS), Hot Isostatic Pressing (HIP) and microwaves sintering techniques on p-type Bi2Te3 thermoelectric properties

Materials research bulletin, 2012-08, Vol.47 (8), p.1954-1960

2012

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Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In2O3 from In(tmhd)3 as a solid precursor

Review of scientific instruments, 2016-02, Vol.87 (2)

2016

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Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces

Surface science, 2007-07, Vol.601 (13), p.2778-2782

2007

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Self-ordering of Ge islands on step-bunched Si(111) surfaces

Applied physics letters, 2003-11, Vol.83 (19), p.4002-4004

2003

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Superhydrophobic polymeric films with hierarchical structures produced by nanoimprint (NIL) and plasma roughening

Applied surface science, 2018-07, Vol.445 (445), p.97-106

2018

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Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals

Journal of the Electrochemical Society, 2009-01, Vol.156 (12), p.H913

2009

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Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1503-S1534

2004

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Controlling the quantum dot nucleation site

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.77-88

2003

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Optoelectronic properties in quantum-confined germanium dots

Applied physics letters, 2007-10, Vol.91 (14), p.141117-141117-3

2007

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Understanding the mechanisms of interfacial reactions during TiO{sub 2} layer growth on RuO{sub 2} by atomic layer deposition with O{sub 2} plasma or H{sub 2}O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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STM study of Si(1 1 1)7×7 reconstructed surface carbonization induced by acetylene

Surface science, 2004-06, Vol.559 (2-3), p.223-232

2004

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Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

Materials science in semiconductor processing, 2006-08, Vol.9 (4-5), p.812-816

2006

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STM studies: spatial resolution limits to fit observations in nanotechnology

Applied surface science, 2000, Vol.164 (1), p.169-174

2000

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Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces

Physical review. B, Condensed matter and materials physics, 2004-05, Vol.69 (20), p.201309.1-201309.4, Article 201309

2004

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Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

Journal of applied physics, 2007-11, Vol.102 (9), p.093704-093704-4

2007

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Photoluminescence of Ge nanocrystals self-assembled on SiO2

Superlattices and microstructures, 2008-10, Vol.44 (4-5), p.305-314

2008

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Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors

Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

Growth of lanthanide-doped YF3 thin films by pulsed liquid injection MOCVD: Influence of deposition parameters on film microstructure

Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

How to switch from a tip to base growth mechanism in carbon nanotube growth by catalytic chemical vapour deposition

Influence of precursor nature on the thermal growth of Tin–Indium oxide layers by MOCVD

A comparative study of Spark Plasma Sintering (SPS), Hot Isostatic Pressing (HIP) and microwaves sintering techniques on p-type Bi2Te3 thermoelectric properties

Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In2O3 from In(tmhd)3 as a solid precursor

Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces

Self-ordering of Ge islands on step-bunched Si(111) surfaces

Superhydrophobic polymeric films with hierarchical structures produced by nanoimprint (NIL) and plasma roughening

Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals

Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

Controlling the quantum dot nucleation site

Optoelectronic properties in quantum-confined germanium dots

Understanding the mechanisms of interfacial reactions during TiO{sub 2} layer growth on RuO{sub 2} by atomic layer deposition with O{sub 2} plasma or H{sub 2}O as oxygen source

Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

STM study of Si(1 1 1)7×7 reconstructed surface carbonization induced by acetylene

Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

STM studies: spatial resolution limits to fit observations in nanotechnology

Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces

Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

Photoluminescence of Ge nanocrystals self-assembled on SiO2

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