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Deep levels created by low energy electron irradiation in 4H-SiC

Journal of applied physics, 2004-11, Vol.96 (9), p.4909-4915

2004

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Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

Journal of applied physics, 2003-04, Vol.93 (8), p.4708-4714

2003

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The radial layout design concept for the Bi-mode insulated gate transistor

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.56-59

2011

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Semiconductor science and technology, 2006-07, Vol.21 (7), p.952-958

2006

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Pseudodonor nature of the D-I defect in 4H-SiC

Applied physics letters, 2001, Vol.78 (1), p.46

2001

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Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications

IEEE transactions on power electronics, 2014-02, Vol.29 (2), p.906-919

2014

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Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

Materials science forum, 2009, Vol.600-603, p.111-114

2009

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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Materials science forum, 2007-09, Vol.556-557, p.271-274

2007

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Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

Materials science forum, 2007-01, Vol.556-557, p.603-606

2007

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Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers

Materials science forum, 2009, Vol.600-603, p.477-480

2009

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Observation of recombination enhanced defect annealing in 4H-SiC

Applied physics letters, 2005-02, Vol.86 (9), p.091903-091903-3

2005

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HTCVD Grown Semi-Insulating SiC Substrates

Materials science forum, 2003-09, Vol.433-436, p.33-38

2003

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Electrical Activity of Residual Boron in Silicon Carbide

Materials science forum, 2002-04, Vol.389-393, p.549-552

2002

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Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Materials science forum, 2006-10, Vol.527-529, p.489-492

2006

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Ion implantation of silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.186-194

2002

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Defects in SiC

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.15-24

2003

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Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

Materials science forum, 2007-01, Vol.556-557, p.81-84

2007

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Characterisation and Defects in Silicon Carbide

Materials science forum, 2002-04, Vol.389-393, p.9-14

2002

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Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC

Materials science forum, 2004-06, Vol.457-460, p.469-472

2004

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Recombination Enhanced Defect Annealing in 4H-SiC

Materials Science Forum, 2005-05, Vol.483-485, p.369-372

2005

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Nitrogen Delta Doping in 4H-SiC Epilayers

Materials science forum, 2003-09, Vol.433-436, p.153-156

2003

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Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Materials science forum, 2002-04, Vol.389-393, p.613-616

2002

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Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals

Materials Science Forum, 2005-05, Vol.483-485, p.409-412

2005

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Photoluminescence upconversion in 4H–SiC

Applied physics letters, 2002-09, Vol.81 (14), p.2547-2549

2002

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Optical and electrical characterization of (Ga, Mn)N/InGaN multiquantum well light-emitting diodes

Journal of electronic materials, 2004-05, Vol.33 (5), p.467-471

2004

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Deep levels created by low energy electron irradiation in 4H-SiC

Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

The radial layout design concept for the Bi-mode insulated gate transistor

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Pseudodonor nature of the D-I defect in 4H-SiC

Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers

Observation of recombination enhanced defect annealing in 4H-SiC

HTCVD Grown Semi-Insulating SiC Substrates

Electrical Activity of Residual Boron in Silicon Carbide

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Ion implantation of silicon carbide

Defects in SiC

Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

Characterisation and Defects in Silicon Carbide

Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC

Recombination Enhanced Defect Annealing in 4H-SiC

Nitrogen Delta Doping in 4H-SiC Epilayers

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals

Photoluminescence upconversion in 4H–SiC

Optical and electrical characterization of (Ga, Mn)N/InGaN multiquantum well light-emitting diodes

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