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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925

2000

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001-02, Vol.222 (4), p.701-705

2001

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Effect of interactive metronome training on children with ADHD

The American journal of occupational therapy, 2001-03, Vol.55 (2), p.155-162

2001

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First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.107-111

2002

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Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Journal of crystal growth, 2001-09, Vol.230 (3), p.564-568

2001

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Point defects in gamma-irradiated n-GaN

Semiconductor science and technology, 2000-01, Vol.15 (1), p.73-78

2000

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Electrical properties of photoanodically generated thin oxide films on n-GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.602-606

2001

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

Journal of electronic materials, 2001-05, Vol.30 (5), p.L17-L20

2001

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Smooth GaN surfaces by photoinduced electro-chemical etching

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.350-354

1999

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.255-258

2001

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Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.424-429

2002

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Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.299-303

2001

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.15-20

2000

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Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

Journal of crystal growth, 2000-03, Vol.210 (1), p.273-277

2000

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Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two Wavelength Excited Photoluminescence

Physica status solidi. A, Applied research, 2001-01, Vol.183 (1), p.189-195

2001

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Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces

MRS proceedings, 1997, Vol.482, Article 1003

1997

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PRODUCCIÓN DE LECHE EN CABRAS CRIOLLAS CON Y SIN SUPLEMENTACIÓN FORRAJERA EN CHUQUISACA, BOLIVIA

Actas iberoamericanas de conservación animal, 2011-12, Vol.1, p.276-279

Stemmer A., Aruzamen J.

2011

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Biliary imaging suggesting common duct obstruction in acute viral hepatitis. Case report

Clinical nuclear medicine, 1987-09, Vol.12 (9), p.711-712

1987

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Design and validation of an intelligent patient monitoring and alarm system based on a fuzzy logic process model

Artificial intelligence in medicine, 1997-09, Vol.11 (1), p.33-53

1997

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Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

Journal of crystal growth, 2001-09, Vol.230 (3-4), p.564-568

2001

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A Reputational Study of Academic Publishers

College & research libraries, 1996-05, Vol.57 (3), p.234-247

1996

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001, Vol.222 (4), p.701-705

2001

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.1-1

2001

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Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1-3), p.222-225

1999

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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Effect of interactive metronome training on children with ADHD

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Point defects in gamma-irradiated n-GaN

Electrical properties of photoanodically generated thin oxide films on n-GaN

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

Smooth GaN surfaces by photoinduced electro-chemical etching

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers

Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two Wavelength Excited Photoluminescence

Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth Surfaces

PRODUCCIÓN DE LECHE EN CABRAS CRIOLLAS CON Y SIN SUPLEMENTACIÓN FORRAJERA EN CHUQUISACA, BOLIVIA

Biliary imaging suggesting common duct obstruction in acute viral hepatitis. Case report

Design and validation of an intelligent patient monitoring and alarm system based on a fuzzy logic process model

Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

A Reputational Study of Academic Publishers

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Raman spectroscopy of disorder effects in AlxGa1−xN solid solutions

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