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Local work function measurements of epitaxial graphene

Applied physics letters, 2008-09, Vol.93 (13), p.133117-133117-3

2008

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Raman spectra of epitaxial graphene on SiC(0001)

Applied physics letters, 2008-05, Vol.92 (20), p.201918-201918-3

2008

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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene

Carbon (New York), 2013-01, Vol.51, p.249-254

2013

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Nature materials, 2009-03, Vol.8 (3), p.203-207

2009

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Friction and dissipation in epitaxial graphene films

Physical review letters, 2009-02, Vol.102 (8), p.086102-086102, Article 086102

2009

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Quasiparticle transformation during a metal-insulator transition in graphene

Physical review letters, 2009-07, Vol.103 (5), p.056404-056404, Article 056404

2009

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Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

Semiconductors (Woodbury, N.Y.), 2020-11, Vol.54 (11), p.1388-1394

2020

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Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (23), Article 235213

2004

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Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene

Nano letters, 2009-03, Vol.9 (3), p.964-968

2009

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Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Applied physics letters, 2011-08, Vol.99 (8), p.081904-081904-3

2011

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Epitaxial graphene: a new material

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1436-1446

2008

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Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation

Physical review. B, Condensed matter and materials physics, 2011-09, Vol.84 (12), Article 125423

2011

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Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.46-54

2020

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Morphology of graphene thin film growth on SiC(0001)

New journal of physics, 2008-02, Vol.10 (2), p.023034

2008

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Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075002-075002 (7)

2009

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Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1677-1685

2018

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IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Experimental and theoretical studies of phonons in hexagonal InN

Applied physics letters, 1999-11, Vol.75 (21), p.3297-3299

1999

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Electronic properties of antimony-vacancy complex in Ge crystals

Journal of applied physics, 2004-04, Vol.95 (8), p.4078-4083

2004

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Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

Acta materialia, 2015-01, Vol.83, p.473-478

2015

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Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice

2d materials, 2016-07, Vol.3 (3), p.35003-035003

2016

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Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles

Surface investigation, x-ray, synchrotron and neutron techniques, 2019-11, Vol.13 (6), p.1155-1159

2019

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Radiation-produced defects in germanium: Experimental data and models of defects

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1571-1587

2017

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Positron annihilation on defects in silicon irradiated with 15 MeV protons

Journal of physics. Condensed matter, 2013-01, Vol.25 (3), p.035801-035801

2013

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Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.942-949

2018

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Local work function measurements of epitaxial graphene

Raman spectra of epitaxial graphene on SiC(0001)

Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Friction and dissipation in epitaxial graphene films

Quasiparticle transformation during a metal-insulator transition in graphene

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Epitaxial graphene: a new material

Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

Morphology of graphene thin film growth on SiC(0001)

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

Experimental and theoretical studies of phonons in hexagonal InN

Electronic properties of antimony-vacancy complex in Ge crystals

Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice

Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles

Radiation-produced defects in germanium: Experimental data and models of defects

Positron annihilation on defects in silicon irradiated with 15 MeV protons

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

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