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Optical anisotropy of CuPt-ordered GaAsBi alloys

Journal of physics. D, Applied physics, 2021-12, Vol.54 (50), p.504001

2021

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Optical and structural properties of BGaN layers grown on different substrates

Journal of physics. D, Applied physics, 2015-11, Vol.48 (46), p.465307-465312

2015

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Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers

Semiconductor science and technology, 2022-06, Vol.37 (6), p.65004

2022

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Terahertz excitation spectra of GaAsBi alloys

Journal of physics. D, Applied physics, 2018-11, Vol.51 (47), p.474001

2018

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Direct bandgap dependence of bismuth films on their thickness

Journal of applied physics, 2022-08, Vol.132 (5)

2022

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin solid films, 2013-06, Vol.536, p.68-73

2013

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Journal of physics. D, Applied physics, 2016-12, Vol.49 (50), p.505101

2016

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THz pulse emission from InAs-based epitaxial structures grown on InP substrates

Semiconductor science and technology, 2016-10, Vol.31 (11), p.115021

2016

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Degradation and optimization of microplastic in aqueous solutions with graphene oxide-based nanomaterials

International journal of environmental science and technology (Tehran), 2023-09, Vol.20 (9), p.9693-9706

2023

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Terahertz pulse emission from GaInAsBi

Journal of applied physics, 2019-05, Vol.125 (17)

2019

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THz-excitation spectroscopy technique for band-offset determination

Optics express, 2018-12, Vol.26 (26), p.33807-33817

2018

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Structural changes in chlorine-substituted SbSI

Journal of applied physics, 2019-09, Vol.126 (11)

2019

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A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown

Surface & coatings technology, 2020-10, Vol.399, p.126123, Article 126123

2020

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Development of polarity inversion in a GaN waveguide structure for modal phase matching

Journal of materials science, 2020-09, Vol.55 (26), p.12008-12021

2020

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Band-offsets of GaInAsBi–InP heterojunctions

Infrared physics & technology, 2020-09, Vol.109, p.103400, Article 103400

2020

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Terahertz time-domain-spectroscopy system based on 1.55 μm fiber laser and photoconductive antennas from dilute bismides

AIP advances, 2016-02, Vol.6 (2), p.025218-025218-5

2016

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GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Journal of crystal growth, 2015-08, Vol.424, p.28-32

2015

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Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1138-1141

2015

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Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Journal of electronic materials, 2014-07, Vol.43 (7), p.2667-2675

2014

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Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire

Materials chemistry and physics, 2015-01, Vol.149-150, p.622-631

2015

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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2015-01, Vol.44 (1), p.188-193

2015

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Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Impact of thermal treatments on epitaxial GayIn1−yAs1−xBix layers luminescent properties

Journal of materials science, 2018-06, Vol.53 (11), p.8339-8346

2018

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Impact of thermal treatments on epitaxial GayIn1−y As1−x Bi x layers luminescent properties

Journal of materials science, 2018-06, Vol.53 (11), p.8339-8346

2018

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Impact of thermal treatments on epitaxial GayIn1−yAs1−xBi x layers luminescent properties

Journal of materials science, 2018-06, Vol.53 (11), p.8339-8346

2018

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Optical anisotropy of CuPt-ordered GaAsBi alloys

Optical and structural properties of BGaN layers grown on different substrates

Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers

Terahertz excitation spectra of GaAsBi alloys

Direct bandgap dependence of bismuth films on their thickness

Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

THz pulse emission from InAs-based epitaxial structures grown on InP substrates

Degradation and optimization of microplastic in aqueous solutions with graphene oxide-based nanomaterials

Terahertz pulse emission from GaInAsBi

THz-excitation spectroscopy technique for band-offset determination

Structural changes in chlorine-substituted SbSI

A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown

Development of polarity inversion in a GaN waveguide structure for modal phase matching

Band-offsets of GaInAsBi–InP heterojunctions

Terahertz time-domain-spectroscopy system based on 1.55 μm fiber laser and photoconductive antennas from dilute bismides

GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications

Impact of thermal treatments on epitaxial GayIn1−yAs1−xBix layers luminescent properties

Impact of thermal treatments on epitaxial GayIn1−y As1−x Bi x layers luminescent properties

Impact of thermal treatments on epitaxial GayIn1−yAs1−xBi x layers luminescent properties

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